The IXTH140P10T is a P-channel enhancement mode MOSFET designed for high-side switching, push-pull amplifiers, and DC choppers. It is packaged in a TO-247 case, measuring 21.46 mm in length and 16.26 mm in width, with a weight of 6 g. The device has a drain-source breakdown voltage of -100 V, continuous drain current of -140 A at 25⁰C, and a maximum on-state resistance of 10 mΩ at -10 V gate bias. It features avalanche rating, extended forward bias safe operating area, and a fast intrinsic diode with a maximum reverse recovery current of -10 A and a recovery charge of 650 nC. Thermal resistance from junction to case is 0.21 °C/W. The part meets avalanche and fast switching requirements and is rated for operation from -55 °C to +150 °C junction temperature.
Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry commonly involved when using an N-Channel MOSFET. This enables designers to reduce component count, thereby improving drive circuit simplicity and over-all component cost structure. Furthermore, it allows for the design of a complementary power output stage with a corresponding N-Channel MOSFET, for a power half bridge stage paired with a simple drive circuit. Advantages: Low gate charge resulting in simple drive requirement High power density Fast switching Fast intrinsic diode Low Qg and RDSon Avalanche rated Extended FBSOA International standard packages
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXTH140P10T |
| Product Name | -50V to -200V P-Channel Power MOSFETs |
| Polarity | P-Channel |
