Littelfuse, Inc. 135V - 200V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options IXTH120N20X4

Description
The new 200V X4-Class Ultra Junction MOSFETs are available with 120A nominal current rating in TO-247 package. These Power MOSFETs feature significantly reduced channel resistance RDS(on) leading to an improvement in the Figure of Merit FOM RDS(on) x RthJC as compared to its predecessor X3-Class. These benefits enable designers to achieve higher efficiency using simplified thermal design. The lowest on-state resistance in TO-220 RDS(ON) = 9.5mΩ Low thermal resistance RthJC = 0.36 K/W Low gate charge Qg = 108nC 175°C operating junction temperature
  • 135V - 200V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options - IXTH120N20X4 - Littelfuse, Inc.
    Littelfuse, Inc.
Datasheet
Description
The new 200V X4-Class Ultra Junction MOSFETs are available with 120A nominal current rating in TO-247 package. These Power MOSFETs feature significantly reduced channel resistance RDS(on) leading to an improvement in the Figure of Merit FOM RDS(on) x RthJC as compared to its predecessor X3-Class. These benefits enable designers to achieve higher efficiency using simplified thermal design. The lowest on-state resistance in TO-220 RDS(ON) = 9.5mΩ Low thermal resistance RthJC = 0.36 K/W Low gate charge Qg = 108nC 175°C operating junction temperature
Datasheet

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135V - 200V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options - IXTH120N20X4 - Littelfuse, Inc.
Littelfuse, Inc.
Rosemont, IL, United States
135V - 200V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options
IXTH120N20X4
135V - 200V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options IXTH120N20X4
The new 200V X4-Class Ultra Junction MOSFETs are available with 120A nominal current rating in TO-247 package. These Power MOSFETs feature significantly reduced channel resistance RDS(on) leading to an improvement in the Figure of Merit FOM RDS(on) x RthJC as compared to its predecessor X3-Class. These benefits enable designers to achieve higher efficiency using simplified thermal design. The lowest on-state resistance in TO-220 RDS(ON) = 9.5mΩ Low thermal resistance RthJC = 0.36 K/W Low gate charge Qg = 108nC 175°C operating junction temperature

The new 200V X4-Class Ultra Junction MOSFETs are available with 120A nominal current rating in TO-247 package. These Power MOSFETs feature significantly reduced channel resistance RDS(on) leading to an improvement in the Figure of Merit FOM RDS(on) x RthJC as compared to its predecessor X3-Class. These benefits enable designers to achieve higher efficiency using simplified thermal design. The lowest on-state resistance in TO-220 RDS(ON) = 9.5mΩ Low thermal resistance RthJC = 0.36 K/W Low gate charge Qg = 108nC 175°C operating junction temperature

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Technical Specifications

  Littelfuse, Inc.
Product Category Transistors
Product Number IXTH120N20X4
Product Name 135V - 200V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options
Polarity N-Channel
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