Qorvo's QPD2018D is a discrete 180-micron pHEMT which operates from DC to 20 GHz. The QPD2018D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions.
The QPD2018D typically provides 22 dBm of output power at P1dB with gain of 14 dB and 55% power-added efficiency at 1 dB compression. This performance makes the QPD2018D appropriate for high efficiency applications. The protective overcoat layer with silicon nitride provides a level of environmental robustness and scratch protection.
Lead-free and RoHS compliant.
| Qorvo | DigiKey | |
|---|---|---|
| Product Category | RF Transistors | Transistors |
| Product Number | QPD2018D | 2312-QPD2018D-ND |
| Product Name | DC - 20 GHz, 180 um Discrete GaAs pHEMT Die | RF FETs, MOSFETs |
| Transistor Type | PHEMT | |
| Transistor Technology / Material | GaAs | |
| Transistor Grade / Operating Range | Military |
