The IXFA3N120 is an N-channel enhancement mode power MOSFET rated for 1200 V drain-source voltage and 3 A continuous drain current at 25°C, designed for switching applications including unclamped inductive loads. It is packaged in the TO-263 (D2PAK) surface-mount case, measuring 9.65 mm × 10.29 mm in body dimensions with a 2.54 mm pitch. The device has a maximum on-resistance of 4.5 Ω at 10 V gate-source voltage and 0.5 A drain current, with a thermal resistance from junction to case of 0.62 K/W. It is rated for operating junction temperatures from -55°C to 150°C and meets UL 94 V-0 flammability standards. The TO-263 package includes a drain tab and has four pins, with the gate, source, and dual drain connections. Avalanche energy rating is 700 mJ with a peak pulsed drain current of 12 A. The part is rated for 10 V/ns dv/dt under unclamped inductive switching conditions.
Trans MOSFET N-CH 1.2KV 3A 3-Pin(2+Tab) D2PAK T/R Product overview: IXFA3N120-TRL from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1.2KV, 3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1.2KV, 3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFA3N120-TRL can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IXFA3N120-TRL |
| Product Name | 1.2KV 3A MOSFET Transistor |
| MOSFET Operating Mode | Enhancement |
| V(BR)DSS | 1200 volts |
| PD | 200000 milliwatts |
