Linear Systems Bipolar Transistor Arrays IT121 PDIP 8L ROHS

Dual NPN bipolar transistor array for general-purpose amplification and switching, housed in an 8-pin PDIP package measuring 0.210 by 0.170 inches. Each transistor supports a maximum collector current of 10 mA and a collector-to-emitter voltage of 45 V, with a power dissipation of 500 mW when mounted on a PCB. The current gain (hFE) is a minimum of 80 at 1 mA collector current, and the current gain bandwidth product is 180 MHz. Matching characteristics include a base-emitter voltage differential of up to 3 mV and a temperature coefficient of 10 µV/°C. The device operates from -55°C to +150°C and meets RoHS standards.