Linear Systems JFETs 2N4416A TO-72 4L ROHS

Description
JFET N-Channel 35V 300mW Through Hole TO-72-4
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Description
JFET N-Channel 35V 300mW Through Hole TO-72-4
Request a Quote
Datasheet
Datasheet Summary
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The 2N4416A is an N-channel JFET designed for high-frequency amplifier applications, housed in a TO-72 package. It has a gate-to-source breakdown voltage of -35 V, a maximum power dissipation of 300 mW, and a gate current limit of 10 mA. The device operates within a junction temperature range of -55 to +135 °C. At 400 MHz, it exhibits a noise figure of 4 dB and a power gain of 10 dB, with a forward transconductance of 4000 µS at 1 kHz. Input capacitance is 0.8 pF and reverse transfer capacitance is 4 pF, both measured at 1 MHz. The cutoff voltage ranges from -2.5 to -6 V, and the gate-to-source saturation current is 5 to 15 mA at 15 V drain-source voltage.

Datasheet Summary
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The 2N4416A is an N-channel JFET designed for high-frequency amplifier applications, housed in a TO-72 package. It has a gate-to-source breakdown voltage of -35 V, a maximum power dissipation of 300 mW, and a gate current limit of 10 mA. The device operates within a junction temperature range of -55 to +135 °C. At 400 MHz, it exhibits a noise figure of 4 dB and a power gain of 10 dB, with a forward transconductance of 4000 µS at 1 kHz. Input capacitance is 0.8 pF and reverse transfer capacitance is 4 pF, both measured at 1 MHz. The cutoff voltage ranges from -2.5 to -6 V, and the gate-to-source saturation current is 5 to 15 mA at 15 V drain-source voltage.

Suppliers

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Product
Description
Supplier Links
JFETs - 4004-2N4416ATO-724LROHS-ND - DigiKey
Thief River Falls, MN, United States
JFET N-Channel 35V 300mW Through Hole TO-72-4

JFET N-Channel 35V 300mW Through Hole TO-72-4

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Technical Specifications

  DigiKey
Product Category Transistors
Product Number 4004-2N4416ATO-724LROHS-ND
Product Name JFETs
Polarity N-Channel
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