JSMicro Semiconductor Co., Ltd. Transistors IPB26CN10N-JSM

Description
TO-263-2L MOSFETs ROHS
  • Transistors - IPB26CN10N-JSM - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
TO-263-2L MOSFETs ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - IPB26CN10N-JSM - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
IPB26CN10N-JSM
Transistors IPB26CN10N-JSM
TO-263-2L MOSFETs ROHS

TO-263-2L MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number IPB26CN10N-JSM
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

GaAs Fet Switches - KCB815 - Micross Components, Inc.
Micross Components, Inc.
GaAs Fet Switches
KCB815
View Details
Power - IGBT - Automotive-qualified IGBTs - Automotive IGBT discretes - AIKW20N60CT - AIKW20N60CT - Infineon Technologies AG
Infineon Technologies AG
Power - IGBT - Automotive-qualified IGBTs - Automotive IGBT discretes - AIKW20N60CT
AIKW20N60CT
Specs
Transistor Type IGBT
Package Type TO-247; PG-TO247-3
Transistor Grade / Operating Range Automotive
View Details
TRANSISTORS - Transistors (BJT) - Single - 2SA2015-TD-E - 855068-2SA2015-TD-E - Win Source Electronics
Rochester Electronics
TRANSISTORS - Transistors (BJT) - Single - 2SA2015-TD-E
2SA2015-TD-E
Specs
Package Type SOT3
View Details
3.4 - 3.6 GHz, 180 Watt, 50 Volt GaN RF Power Transistor - QPD3601 - Qorvo
Qorvo
3.4 - 3.6 GHz, 180 Watt, 50 Volt GaN RF Power Transistor
QPD3601
Specs
Transistor Technology / Material GaN
Package Type NI-400
View Details