Win Source Part Number: 1063918-MII75-12A3
Category: Discrete Semiconductor Products>Transistors
Package: Box
Standard Package: 6
Power - Max: 370 W
Configuration: Half Bridge
Input: Standard
IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 90 A
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
Current - Collector Cutoff (Max): 4 mA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
NTC Thermistor: No
Mounting Type: Chassis Mount
Package / Case: Y4-M5
Supplier Device Package: Y4-M5
Temperature Range - Operating: -40°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 60 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: IXYS
Base Product Number: MII75
IGBT MODULE 1200V 90A 370W Y4M5
| Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 1063918-MII75-12A3 | MII75-12A3 |
| Product Name | Discrete Semiconductor Products - Transistors - IGBTs - Modules | Discrete Semiconductor Products - Transistors - IGBTs |
| VCES | 1200 volts |