IGBT 1200V 90A 625W Through Hole TO-247 (IXTH)
IGBT 1200V 90A 625W TO247
Win Source Part Number: 1338387-IXYH50N120C3
Category: Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Series: GenX3™, XPT™
Package: Tube
Standard Package: 30
Power - Max: 625 W
Reverse Recovery Time (trr): 195 ns
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 210 A
Switching Energy: 3mJ (on) , 1mJ (off)
Input Type: Standard
Gate Charge: 142 nC
Test Condition: 600V, 50A, 5Ohm, 15V
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 (IXTH)
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 52 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: IXYS
Base Product Number: IXYH50
California Prop 65: Warning Information
Current - Collector (Ic) (Max): 90 A
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 50A
Td (on/off) @ 25°C: 28ns/133ns
IGBT 1200V 90A 625W TO247
IGBT Transistors XPT 1200V IGBT GenX6 XPT IGBT
| DigiKey | ODG (Origin Data Global) | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXYH50N120C3D1-ND | IXYH50N120C3D1 | 1338387-IXYH50N120C3D1 | IXYH50N120C3D1 | IXYH50N120C3D1 |
| Product Name | Single IGBTs | Single IGBTs | Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs | Discrete Semiconductor Products - Transistors - IGBTs | IGBT Transistors |
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
