Littelfuse, Inc. Single IGBTs IXYH40N120C3D1

Description
IGBT 1200V 64A 480W Through Hole TO-247 (IXTH)
Request a Quote Datasheet
Description
IGBT 1200V 64A 480W Through Hole TO-247 (IXTH)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single IGBTs - IXYH40N120C3D1-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
IXYH40N120C3D1-ND
Single IGBTs IXYH40N120C3D1-ND
IGBT 1200V 64A 480W Through Hole TO-247 (IXTH)

IGBT 1200V 64A 480W Through Hole TO-247 (IXTH)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - Single - 1066210-IXYH40N120C3D1 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - IGBTs - Single
1066210-IXYH40N120C3D1
Discrete Semiconductor Products - Transistors - IGBTs - Single 1066210-IXYH40N120C3D1
Win Source Part Number: 1066210-IXYH40N120C3 D1 Category: Discrete Semiconductor Products>Transistors - IGBTs - Single Series: GenX3™, XPT™ Package: Tube Standard Package: 30 Power - Max: 480 W Reverse Recovery Time (trr): 195 ns Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 64 A Current - Collector Pulsed (Icm): 105 A Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 40A Switching Energy: 3.9mJ (on), 660µJ (off) Input Type: Standard Gate Charge: 85 nC Td (on/off) @ 25°C: 24ns/125ns Test Condition: 600V, 40A, 10Ohm, 15V Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 (IXTH) Temperature Range - Operating: -55°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): IXYH30N120C3; IXGH40N120C3D1; IRG4PH50UPBF; IRG4PH50UDPBF; NGTB25N120FL2WG; FGH40N120ANTU; ECCN: EAR99 Fake Threat In the Open Market: 55 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Base Product Number: IXYH40

Win Source Part Number: 1066210-IXYH40N120C3D1
Category: Discrete Semiconductor Products>Transistors - IGBTs - Single
Series: GenX3™, XPT™
Package: Tube
Standard Package: 30
Power - Max: 480 W
Reverse Recovery Time (trr): 195 ns
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 64 A
Current - Collector Pulsed (Icm): 105 A
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 40A
Switching Energy: 3.9mJ (on), 660µJ (off)
Input Type: Standard
Gate Charge: 85 nC
Td (on/off) @ 25°C: 24ns/125ns
Test Condition: 600V, 40A, 10Ohm, 15V
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 (IXTH)
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): IXYH30N120C3; IXGH40N120C3D1; IRG4PH50UPBF; IRG4PH50UDPBF; NGTB25N120FL2WG; FGH40N120ANTU;
ECCN: EAR99
Fake Threat In the Open Market: 55 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: IXYS
Base Product Number: IXYH40

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - IXYH40N120C3D1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
IXYH40N120C3D1
Discrete Semiconductor Products - Transistors - IGBTs IXYH40N120C3D1
IGBT 1200V 64A 480W TO247

IGBT 1200V 64A 480W TO247

Supplier's Site
Sheung Wan, Hong Kong
IGBT Transistors
IXYH40N120C3D1
IGBT Transistors IXYH40N120C3D1
IGBT Transistors XPT 1200V IGBT GenX5 XPT IGBT

IGBT Transistors XPT 1200V IGBT GenX5 XPT IGBT

Buy Now Datasheet

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number IXYH40N120C3D1-ND 1066210-IXYH40N120C3D1 IXYH40N120C3D1 IXYH40N120C3D1
Product Name Single IGBTs Discrete Semiconductor Products - Transistors - IGBTs - Single Discrete Semiconductor Products - Transistors - IGBTs IGBT Transistors
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Unlock Full Specs
to access all available technical data