Littelfuse, Inc. Single IGBTs IXYH30N170C

Description
IGBT 1700V 108A 937W Through Hole TO-247 (IXTH)
Request a Quote Datasheet
Description
IGBT 1700V 108A 937W Through Hole TO-247 (IXTH)
Request a Quote Datasheet

Suppliers

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Product
Description
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Single IGBTs - IXYH30N170C-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
IXYH30N170C-ND
Single IGBTs IXYH30N170C-ND
IGBT 1700V 108A 937W Through Hole TO-247 (IXTH)

IGBT 1700V 108A 937W Through Hole TO-247 (IXTH)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs - 1355078-IXYH30N170C - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
1355078-IXYH30N170C
Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs 1355078-IXYH30N170C
Win Source Part Number: 1355078-IXYH30N170C Category: Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs Temperature Range - Operating: -55°C ~ 175°C (TJ) Fake Threat In the Open Market: 51 pct. MSL Level: 1 (Unlimited) Mfr: IXYS Series: XPT™ Package: Tube Product Status: Active Package / Case: TO-247-3 Supplier Device Package: TO-247 (IXTH) Base Product Number: IXYH30 Mounting Type: Through Hole HTSUS: 8541.29.0095 REACH Status: REACH Unaffected ECCN: EAR99 Test Condition: 850V, 30A, 10Ohm, 15V Current - Collector (Ic) (Max): 108 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 937 W Input Type: Standard Current - Collector Pulsed (Icm): 255 A Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 30A Switching Energy: 5.9mJ (on), 3.3mJ (off) Gate Charge: 140 nC Td (on/off) @ 25°C: 28ns/150ns

Win Source Part Number: 1355078-IXYH30N170C
Category: Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Fake Threat In the Open Market: 51 pct.
MSL Level: 1 (Unlimited)
Mfr: IXYS
Series: XPT™
Package: Tube
Product Status: Active
Package / Case: TO-247-3
Supplier Device Package: TO-247 (IXTH)
Base Product Number: IXYH30
Mounting Type: Through Hole
HTSUS: 8541.29.0095
REACH Status: REACH Unaffected
ECCN: EAR99
Test Condition: 850V, 30A, 10Ohm, 15V
Current - Collector (Ic) (Max): 108 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 937 W
Input Type: Standard
Current - Collector Pulsed (Icm): 255 A
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 30A
Switching Energy: 5.9mJ (on), 3.3mJ (off)
Gate Charge: 140 nC
Td (on/off) @ 25°C: 28ns/150ns

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Sheung Wan, Hong Kong
IGBT Transistors
IXYH30N170C
IGBT Transistors IXYH30N170C
IGBT Transistors 1700V/108A High Voltage XPT IGBT

IGBT Transistors 1700V/108A High Voltage XPT IGBT

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - IXYH30N170C - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
IXYH30N170C
Discrete Semiconductor Products - Transistors - IGBTs IXYH30N170C
1700V/108A HIGH VOLTAGE XPT IGB

1700V/108A HIGH VOLTAGE XPT IGB

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number IXYH30N170C-ND 1355078-IXYH30N170C IXYH30N170C IXYH30N170C
Product Name Single IGBTs Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs IGBT Transistors Discrete Semiconductor Products - Transistors - IGBTs
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
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