Zilog TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTY12N06T IXTY12N06T

Description
Manufacturer: IXYS Win Source Part Number: 1049970-IXTY12N06T Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 33W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-252 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 12A (Tc) Gate-Source Threshold Voltage: 4V @ 25μA Max Gate Charge: 3.4nC @ 10V Max Input Capacitance: 256pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 85 mOhm @ 6A, 10V Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: IXYS Win Source Part Number: 1049970-IXTY12N06T Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 33W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-252 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 12A (Tc) Gate-Source Threshold Voltage: 4V @ 25μA Max Gate Charge: 3.4nC @ 10V Max Input Capacitance: 256pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 85 mOhm @ 6A, 10V Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

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Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTY12N06T - 1049970-IXTY12N06T - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTY12N06T
1049970-IXTY12N06T
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTY12N06T 1049970-IXTY12N06T
Manufacturer: IXYS Win Source Part Number: 1049970-IXTY12N06T Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 33W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-252 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 12A (Tc) Gate-Source Threshold Voltage: 4V @ 25μA Max Gate Charge: 3.4nC @ 10V Max Input Capacitance: 256pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 85 mOhm @ 6A, 10V Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Sufficient

Manufacturer: IXYS
Win Source Part Number: 1049970-IXTY12N06T
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 33W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-252
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 12A (Tc)
Gate-Source Threshold Voltage: 4V @ 25μA
Max Gate Charge: 3.4nC @ 10V
Max Input Capacitance: 256pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 85 mOhm @ 6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTY12N06T - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTY12N06T
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTY12N06T
MOSFET N-CH 60V 12A TO252

MOSFET N-CH 60V 12A TO252

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1049970-IXTY12N06T IXTY12N06T
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTY12N06T Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel
V(BR)DSS 60 volts
PD 33000 milliwatts
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