Zilog Single FETs, MOSFETs IXTX6N200P3HV

Description
N-Channel 2000V 6A (Tc) 960W (Tc) Through Hole TO-247PLUS-HV
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Description
N-Channel 2000V 6A (Tc) 960W (Tc) Through Hole TO-247PLUS-HV
Request a Quote Datasheet

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Single FETs, MOSFETs - IXTX6N200P3HV-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXTX6N200P3HV-ND
Single FETs, MOSFETs IXTX6N200P3HV-ND
N-Channel 2000V 6A (Tc) 960W (Tc) Through Hole TO-247PLUS-HV

N-Channel 2000V 6A (Tc) 960W (Tc) Through Hole TO-247PLUS-HV

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs - 1346649-IXTX6N200P3HV - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
1346649-IXTX6N200P3HV
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs 1346649-IXTX6N200P3HV
Win Source Part Number: 1346649-IXTX6N200P3H V Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Series: Polar P3™ Package: Tube Standard Package: 30 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 2000 V Power Dissipation (Max): 960W (Tc) Mounting Type: Through Hole Package / Case: TO-247-3 Variant Supplier Device Package: TO-247PLUS-HV Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 38 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Base Product Number: IXTX6 Drive Voltage (Max Rds On, Min Rds On): 10V California Prop 65: Warning Information Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 4Ohm @ 3A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V

Win Source Part Number: 1346649-IXTX6N200P3HV
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Series: Polar P3™
Package: Tube
Standard Package: 30
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 2000 V
Power Dissipation (Max): 960W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Supplier Device Package: TO-247PLUS-HV
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 38 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: IXYS
Base Product Number: IXTX6
Drive Voltage (Max Rds On, Min Rds On): 10V
California Prop 65: Warning Information
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 4Ohm @ 3A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V

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Sheung Wan, Hong Kong
MOSFET DISC MOSFET N-CH STD-POLAR3

MOSFET DISC MOSFET N-CH STD-POLAR3

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTX6N200P3HV - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTX6N200P3HV
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTX6N200P3HV
MOSFET N-CH 2000V 6A TO247PLUSHV

MOSFET N-CH 2000V 6A TO247PLUSHV

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IXTX6N200P3HV-ND 1346649-IXTX6N200P3HV IXTX6N200P3HV IXTX6N200P3HV
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
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