The IXTV26N50PS is an N-channel enhancement mode MOSFET designed for high-power switching applications, featuring an avalanche-rated structure and low on-resistance. It is packaged in the PLUS220SMD surface-mount style, with a maximum drain-source voltage of 500 V and a continuous drain current of 26 A at 25°C. The device has a typical on-resistance of 230 mΩ at 10 V gate drive and 13 A drain current, and a gate charge of 65 nC. Thermal resistance from junction to case is 0.31 °C/W. Operating junction temperature ranges from -55°C to 150°C. The part is rated for unclamped inductive switching with an energy rating of 40 mJ, and meets standard automotive and industrial reliability criteria. Weight is 5 g.
Win Source Part Number: 1346814-IXTV26N50PS
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Series: PolarHV™
Package: Tube
Standard Package: 50
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 500 V
Power Dissipation (Max): 460W (Tc)
Mounting Type: Surface Mount
Package / Case: PLUS-220SMD
Supplier Device Package: PLUS-220SMD
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 46 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: IXYS
Base Product Number: IXTV26
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 13A, 10V
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
| Win Source Electronics | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1346814-IXTV26N50PS |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs |
| Polarity | N-Channel |
