Zilog Single FETs, MOSFETs IXTT34N65X2HV

Description
N-Channel 650V 34A (Tc) 540W (Tc) Surface Mount TO-268HV (IXTT)
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Description
N-Channel 650V 34A (Tc) 540W (Tc) Surface Mount TO-268HV (IXTT)
Request a Quote Datasheet

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Single FETs, MOSFETs - IXTT34N65X2HV-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXTT34N65X2HV-ND
Single FETs, MOSFETs IXTT34N65X2HV-ND
N-Channel 650V 34A (Tc) 540W (Tc) Surface Mount TO-268HV (IXTT)

N-Channel 650V 34A (Tc) 540W (Tc) Surface Mount TO-268HV (IXTT)

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs - 1346713-IXTT34N65X2HV - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
1346713-IXTT34N65X2HV
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs 1346713-IXTT34N65X2HV
Win Source Part Number: 1346713-IXTT34N65X2H V Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Series: Ultra X2 Package: Tube Standard Package: 30 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 650 V Power Dissipation (Max): 540W (Tc) Mounting Type: Surface Mount Package / Case: TO-268-3, D³Pak (2 Leads + Tab) , TO-268AA Supplier Device Package: TO-268HV (IXTT) Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 65 pct. MSL Level: 3 (168 Hours) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Base Product Number: IXTT34 Drive Voltage (Max Rds On, Min Rds On): 10V California Prop 65: Warning Information Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 96mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V

Win Source Part Number: 1346713-IXTT34N65X2HV
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Series: Ultra X2
Package: Tube
Standard Package: 30
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Power Dissipation (Max): 540W (Tc)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D³Pak (2 Leads + Tab) , TO-268AA
Supplier Device Package: TO-268HV (IXTT)
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 65 pct.
MSL Level: 3 (168 Hours)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: IXYS
Base Product Number: IXTT34
Drive Voltage (Max Rds On, Min Rds On): 10V
California Prop 65: Warning Information
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 96mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V

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Sheung Wan, Hong Kong
MOSFET DISCMSFT NCHULTRAJNCTN X2CLASS

MOSFET DISCMSFT NCHULTRAJNCTN X2CLASS

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTT34N65X2HV - Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTT34N65X2HV
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTT34N65X2HV
MOSFET N-CH 650V 34A TO268HV

MOSFET N-CH 650V 34A TO268HV

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Acme Chip Technology Co., Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IXTT34N65X2HV-ND 1346713-IXTT34N65X2HV IXTT34N65X2HV IXTT34N65X2HV
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
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