Zilog Single FETs, MOSFETs IXTP05N100M

Description
N-Channel 1000V 700mA (Tc) 25W (Tc) Through Hole TO-220-3
Request a Quote Datasheet
Description
N-Channel 1000V 700mA (Tc) 25W (Tc) Through Hole TO-220-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 238-IXTP05N100M-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
238-IXTP05N100M-ND
Single FETs, MOSFETs 238-IXTP05N100M-ND
N-Channel 1000V 700mA (Tc) 25W (Tc) Through Hole TO-220-3

N-Channel 1000V 700mA (Tc) 25W (Tc) Through Hole TO-220-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTP05N100M - 777659-IXTP05N100M - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTP05N100M
777659-IXTP05N100M
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTP05N100M 777659-IXTP05N100M
Manufacturer: IXYS Win Source Part Number: 777659-IXTP05N100M Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-220-3 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 700mA (Tc) Family Name: IXTP05N100M Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: TO-220AB Channel Type Type: N Drain Source Voltage: 1000V Vgs(th) (Maximum) @ Id: 4.5V @ 25μA Gate Charge (Qg) (Maximum) @ Vgs: 7.8nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 260pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 25W (Tc) Rds On (Maximum) @ Id, Vgs: 17 Ohm @ 375mA, 10V Alternative Parts (Cross-Reference): STP1N105K3; MTP1N100E; SiHFBG20-E3; SiHFBG20; Estimated EOL Date: 2029 Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Limited

Manufacturer: IXYS
Win Source Part Number: 777659-IXTP05N100M
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-220-3
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 700mA (Tc)
Family Name: IXTP05N100M
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: TO-220AB
Channel Type Type: N
Drain Source Voltage: 1000V
Vgs(th) (Maximum) @ Id: 4.5V @ 25μA
Gate Charge (Qg) (Maximum) @ Vgs: 7.8nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 260pF @ 25V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 25W (Tc)
Rds On (Maximum) @ Id, Vgs: 17 Ohm @ 375mA, 10V
Alternative Parts (Cross-Reference): STP1N105K3; MTP1N100E; SiHFBG20-E3; SiHFBG20;
Estimated EOL Date: 2029
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTP05N100M - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTP05N100M
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTP05N100M
MOSFET N-CH 1000V 700MA TO220AB

MOSFET N-CH 1000V 700MA TO220AB

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 0.5 Amps 1000V

MOSFET 0.5 Amps 1000V

Buy Now Datasheet
Single FETs, MOSFETs - IXTP05N100M - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IXTP05N100M
Single FETs, MOSFETs IXTP05N100M
MOSFET N-CH 1000V 700MA TO220AB

MOSFET N-CH 1000V 700MA TO220AB

Supplier's Site Datasheet

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED ODG (Origin Data Global)
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 238-IXTP05N100M-ND 777659-IXTP05N100M IXTP05N100M IXTP05N100M IXTP05N100M
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTP05N100M Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Single FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3 TO-220; TO-220-3 TO-220; TO-220-3
PD 25000 milliwatts 25000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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