Zilog TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTP05N100M IXTP05N100M

Description
Manufacturer: IXYS Win Source Part Number: 777659-IXTP05N100M Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-220-3 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 700mA (Tc) Family Name: IXTP05N100M Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: TO-220AB Channel Type Type: N Drain Source Voltage: 1000V Vgs(th) (Maximum) @ Id: 4.5V @ 25μA Gate Charge (Qg) (Maximum) @ Vgs: 7.8nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 260pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 25W (Tc) Rds On (Maximum) @ Id, Vgs: 17 Ohm @ 375mA, 10V Alternative Parts (Cross-Reference): STP1N105K3; MTP1N100E; SiHFBG20-E3; SiHFBG20; Estimated EOL Date: 2029 Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Limited
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Description
Manufacturer: IXYS Win Source Part Number: 777659-IXTP05N100M Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-220-3 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 700mA (Tc) Family Name: IXTP05N100M Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: TO-220AB Channel Type Type: N Drain Source Voltage: 1000V Vgs(th) (Maximum) @ Id: 4.5V @ 25μA Gate Charge (Qg) (Maximum) @ Vgs: 7.8nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 260pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 25W (Tc) Rds On (Maximum) @ Id, Vgs: 17 Ohm @ 375mA, 10V Alternative Parts (Cross-Reference): STP1N105K3; MTP1N100E; SiHFBG20-E3; SiHFBG20; Estimated EOL Date: 2029 Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTP05N100M - 777659-IXTP05N100M - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTP05N100M
777659-IXTP05N100M
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTP05N100M 777659-IXTP05N100M
Manufacturer: IXYS Win Source Part Number: 777659-IXTP05N100M Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-220-3 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 700mA (Tc) Family Name: IXTP05N100M Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: TO-220AB Channel Type Type: N Drain Source Voltage: 1000V Vgs(th) (Maximum) @ Id: 4.5V @ 25μA Gate Charge (Qg) (Maximum) @ Vgs: 7.8nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 260pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 25W (Tc) Rds On (Maximum) @ Id, Vgs: 17 Ohm @ 375mA, 10V Alternative Parts (Cross-Reference): STP1N105K3; MTP1N100E; SiHFBG20-E3; SiHFBG20; Estimated EOL Date: 2029 Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Limited

Manufacturer: IXYS
Win Source Part Number: 777659-IXTP05N100M
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-220-3
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 700mA (Tc)
Family Name: IXTP05N100M
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: TO-220AB
Channel Type Type: N
Drain Source Voltage: 1000V
Vgs(th) (Maximum) @ Id: 4.5V @ 25μA
Gate Charge (Qg) (Maximum) @ Vgs: 7.8nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 260pF @ 25V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 25W (Tc)
Rds On (Maximum) @ Id, Vgs: 17 Ohm @ 375mA, 10V
Alternative Parts (Cross-Reference): STP1N105K3; MTP1N100E; SiHFBG20-E3; SiHFBG20;
Estimated EOL Date: 2029
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - 238-IXTP05N100M-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
238-IXTP05N100M-ND
Single FETs, MOSFETs 238-IXTP05N100M-ND
N-Channel 1000V 700mA (Tc) 25W (Tc) Through Hole TO-220-3

N-Channel 1000V 700mA (Tc) 25W (Tc) Through Hole TO-220-3

Buy Now Datasheet
Single FETs, MOSFETs - IXTP05N100M - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IXTP05N100M
Single FETs, MOSFETs IXTP05N100M
MOSFET N-CH 1000V 700MA TO220AB

MOSFET N-CH 1000V 700MA TO220AB

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTP05N100M - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTP05N100M
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTP05N100M
MOSFET N-CH 1000V 700MA TO220AB

MOSFET N-CH 1000V 700MA TO220AB

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 0.5 Amps 1000V

MOSFET 0.5 Amps 1000V

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 777659-IXTP05N100M 238-IXTP05N100M-ND IXTP05N100M IXTP05N100M IXTP05N100M
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTP05N100M Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
PD 25000 milliwatts 25000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-220; SOT3 TO-220; TO-220-3 TO-220; TO-220-3 TO-220; TO-220-3
Packing Method Tube; Tube Tube; Tube
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