The IXTN400N20X4 is a 200 V, 340 A N-channel enhancement mode MOSFET with a drain-source on-resistance of 3.0 mΩ, designed for high-power switching applications such as DC load switching and energy storage systems. It is packaged in an isolated SOT-227B (miniBLOC™) case with a baseplate that provides 2500 V AC RMS isolation and measures 31.88 mm × 38.23 mm × 13.10 mm. The device is rated for a maximum junction temperature of 175 °C and has a thermal resistance from junction to case of 0.18 K/W. It meets avalanche energy and current ratings of 4 J and 200 A respectively, and is qualified under standards including RoHS and IEC 60286-3 for terminal connections. Mounting requires a torque of 1.5 Nm for the baseplate and 1.3 Nm for terminal connections.
Ultra Junction X4-Class Power
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 238-IXTN400N20X4-ND |
| Product Name | Single FETs, MOSFETs |
| Polarity | N-Channel |