Manufacturer: IXYS
Win Source Part Number: 1049837-IXTH80N20L
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 520W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247 (IXTH)
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 80A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 180nC @ 10V
Max Input Capacitance: 6160pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 32 mOhm @ 40A, 10V
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Sufficient
MOSFET N-CH 200V 80A TO247
N-Channel 200V 80A (Tc) 520W (Tc) Through Hole TO-247 (IXTH)
MOSFET N-CH 200V 80A TO247
MOSFET Standard Linear Power MOSFETs
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1049837-IXTH80N20L | IXTH80N20L | 238-IXTH80N20L-ND | IXTH80N20L | IXTH80N20L |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH80N20L | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | ||
| V(BR)DSS | 200 volts | 200 volts | |||
| PD | 520000 milliwatts | 520000 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
