Zilog Single FETs, MOSFETs IXTH32P20T

Description
P-Channel 200V 32A (Tc) 300W (Tc) Through Hole TO-247 (IXTH)
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Description
P-Channel 200V 32A (Tc) 300W (Tc) Through Hole TO-247 (IXTH)
Request a Quote Datasheet

Suppliers

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Product
Description
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Single FETs, MOSFETs - IXTH32P20T-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXTH32P20T-ND
Single FETs, MOSFETs IXTH32P20T-ND
P-Channel 200V 32A (Tc) 300W (Tc) Through Hole TO-247 (IXTH)

P-Channel 200V 32A (Tc) 300W (Tc) Through Hole TO-247 (IXTH)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH32P20T - 1049798-IXTH32P20T - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH32P20T
1049798-IXTH32P20T
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH32P20T 1049798-IXTH32P20T
Manufacturer: IXYS Win Source Part Number: 1049798-IXTH32P20T Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 300W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 (IXTH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 32A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 185nC @ 10V Max Input Capacitance: 14500pF @ 25V Maximum Gate-Source Voltage: ±15V Maximum Rds On at Id,Vgs: 130 mOhm @ 16A, 10V Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Sufficient

Manufacturer: IXYS
Win Source Part Number: 1049798-IXTH32P20T
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 300W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247 (IXTH)
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 32A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 185nC @ 10V
Max Input Capacitance: 14500pF @ 25V
Maximum Gate-Source Voltage: ±15V
Maximum Rds On at Id,Vgs: 130 mOhm @ 16A, 10V
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Sufficient

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTH32P20T - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTH32P20T
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTH32P20T
MOSFET P-CH 200V 32A TO247

MOSFET P-CH 200V 32A TO247

Supplier's Site
Sheung Wan, Hong Kong
MOSFET TrenchP Power MOSFET

MOSFET TrenchP Power MOSFET

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXTH32P20T-ND 1049798-IXTH32P20T IXTH32P20T IXTH32P20T
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH32P20T Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity P-Channel P-Channel; P-Channel
Package Type TO-247; TO-247-3 TO-247; SOT3; TO-247 (IXTH) TO-247; TO-247-3
V(BR)DSS 200 volts
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