Zilog Single FETs, MOSFETs IXTH20N50D

Description
N-Channel 500V 20A (Tc) 400W (Tc) Through Hole TO-247 (IXTH)
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Description
N-Channel 500V 20A (Tc) 400W (Tc) Through Hole TO-247 (IXTH)
Request a Quote Datasheet

Suppliers

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Product
Description
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Single FETs, MOSFETs - IXTH20N50D-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXTH20N50D-ND
Single FETs, MOSFETs IXTH20N50D-ND
N-Channel 500V 20A (Tc) 400W (Tc) Through Hole TO-247 (IXTH)

N-Channel 500V 20A (Tc) 400W (Tc) Through Hole TO-247 (IXTH)

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH20N50D - 1049780-IXTH20N50D - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH20N50D
1049780-IXTH20N50D
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH20N50D 1049780-IXTH20N50D
Manufacturer: IXYS Win Source Part Number: 1049780-IXTH20N50D Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET FET Feature: Depletion Mode Polarity: N-Channel Power Dissipation (Max): 400W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 (IXTH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 20A (Tc) Max Gate Charge: 125nC @ 10V Max Input Capacitance: 2500pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 330 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Balance

Manufacturer: IXYS
Win Source Part Number: 1049780-IXTH20N50D
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
FET Feature: Depletion Mode
Polarity: N-Channel
Power Dissipation (Max): 400W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247 (IXTH)
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 20A (Tc)
Max Gate Charge: 125nC @ 10V
Max Input Capacitance: 2500pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 330 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTH20N50D - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTH20N50D
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTH20N50D
MOSFET N-CH 500V 20A TO247

MOSFET N-CH 500V 20A TO247

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 20 Amps 500V 0.33 Rds

MOSFET 20 Amps 500V 0.33 Rds

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXTH20N50D-ND 1049780-IXTH20N50D IXTH20N50D IXTH20N50D
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTH20N50D Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; N-Channel
Package Type TO-247; TO-247-3 TO-247; SOT3; TO-247 (IXTH) TO-247; TO-247-3
MOSFET Operating Mode Depletion
V(BR)DSS 500 volts
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