Zilog IGBT Transistors IXSN50N60BD3

The IXSN50N60BD3 is an IGBT with an integrated HiPerFRED diode in a miniBLOC SOT-227B package, rated for 600 V collector-emitter voltage and 75 A continuous collector current at 25°C. It features an aluminum nitride isolation layer with 3000 V~ isolation voltage, low package inductance under 10 nH, and a mounting torque specification of 1.5 Nm. The device has a typical collector-emitter saturation voltage of 2.5 V at 50 A and 25°C, and a thermal resistance from junction to case of 0.50 K/W. The integrated free-wheeling diode has a forward voltage of 1.75 V at 60 A. Operating temperature range is from -40°C to +150°C, with a storage temperature range of -40°C to +150°C. The device is designed for AC motor speed control, DC servo drives, DC choppers, and buck converters.