IGBT PT 1200V 300W Surface Mount TO-268AA
Win Source Part Number: 1226836-IXGT30N120B3
Category: Discrete Semiconductor Products>Transistors
Series: GenX3™
Package: Tube
Standard Package: 30
Mounting: SMD (SMT)
Power - Max: 300 W
Reverse Recovery Time (trr): 100 ns
IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 150 A
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 30A
Switching Energy: 3.47mJ (on), 2.16mJ (off)
Input Type: Standard
Gate Charge: 87 nC
Td (on/off) @ 25°C: 16ns/127ns
Test Condition: 960V, 30A, 5Ohm, 15V
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device Package: TO-268AA
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 74 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: IXYS
Base Product Number: IXGT30
IGBT 1200V 300W TO268
| DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXGT30N120B3D1-ND | 1226836-IXGT30N120B3D1 | IXGT30N120B3D1 | IXGT30N120B3D1 |
| Product Name | Single IGBTs | Discrete Semiconductor Products - Transistors - IGBTs - Single | Discrete Semiconductor Products - Transistors - IGBTs | Single IGBTs |
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
