Littelfuse, Inc. IGBTs - Single - IXGH48N60B3 IXGH48N60B3

Description
Manufacturer: IXYS Win Source Part Number: 139850-IXGH48N60B3 Packaging: Tube/Rail Mounting: Through Hole IGBT Type: PT Input Type: Standard Gate Charge: 115nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXGH) VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 300W Pulsed Collector Current: 280A Collector-emitter saturation voltage(Max): 1.8V @ 15V, 32A Total Switching Energy(Ets): 840μJ (on), 660μJ (off) Turn-on and Turn-off delay time: 22ns/130ns Testing Conditions: 480V, 30A, 5 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Limited
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Description
Manufacturer: IXYS Win Source Part Number: 139850-IXGH48N60B3 Packaging: Tube/Rail Mounting: Through Hole IGBT Type: PT Input Type: Standard Gate Charge: 115nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXGH) VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 300W Pulsed Collector Current: 280A Collector-emitter saturation voltage(Max): 1.8V @ 15V, 32A Total Switching Energy(Ets): 840μJ (on), 660μJ (off) Turn-on and Turn-off delay time: 22ns/130ns Testing Conditions: 480V, 30A, 5 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Limited
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Suppliers

Company
Product
Description
Supplier Links
IGBTs - Single - IXGH48N60B3 - 139850-IXGH48N60B3 - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - IXGH48N60B3
139850-IXGH48N60B3
IGBTs - Single - IXGH48N60B3 139850-IXGH48N60B3
Manufacturer: IXYS Win Source Part Number: 139850-IXGH48N60B3 Packaging: Tube/Rail Mounting: Through Hole IGBT Type: PT Input Type: Standard Gate Charge: 115nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXGH) VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 300W Pulsed Collector Current: 280A Collector-emitter saturation voltage(Max): 1.8V @ 15V, 32A Total Switching Energy(Ets): 840μJ (on), 660μJ (off) Turn-on and Turn-off delay time: 22ns/130ns Testing Conditions: 480V, 30A, 5 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Limited

Manufacturer: IXYS
Win Source Part Number: 139850-IXGH48N60B3
Packaging: Tube/Rail
Mounting: Through Hole
IGBT Type: PT
Input Type: Standard
Gate Charge: 115nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AD (IXGH)
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 300W
Pulsed Collector Current: 280A
Collector-emitter saturation voltage(Max): 1.8V @ 15V, 32A
Total Switching Energy(Ets): 840μJ (on), 660μJ (off)
Turn-on and Turn-off delay time: 22ns/130ns
Testing Conditions: 480V, 30A, 5 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single IGBTs - IXGH48N60B3-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
IXGH48N60B3-ND
Single IGBTs IXGH48N60B3-ND
IGBT PT 600V 300W Through Hole TO-247AD

IGBT PT 600V 300W Through Hole TO-247AD

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Discrete Semiconductor Products - Transistors - IGBTs - IXGH48N60B3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
IXGH48N60B3
Discrete Semiconductor Products - Transistors - IGBTs IXGH48N60B3
IGBT 600V 300W TO247AD

IGBT 600V 300W TO247AD

Supplier's Site
Sheung Wan, Hong Kong
IGBT Modules
IXGH48N60B3
IGBT Modules IXGH48N60B3
IGBT Modules 48 Amps 600V

IGBT Modules 48 Amps 600V

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Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 139850-IXGH48N60B3 IXGH48N60B3-ND IXGH48N60B3 IXGH48N60B3
Product Name IGBTs - Single - IXGH48N60B3 Single IGBTs Discrete Semiconductor Products - Transistors - IGBTs IGBT Modules
VCE(on) 1.8 volts
PD 300000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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