Littelfuse, Inc. IGBTs - Single - IXGH40N120B2D1 IXGH40N120B2D1

Description
Manufacturer: IXYS Win Source Part Number: 1049621-IXGH40N120B2 D1 Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 100ns IGBT Type: PT Input Type: Standard Gate Charge: 138nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXGH) Maximum Current Collector: 75A VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V Maximum Power Dissipation: 380W Pulsed Collector Current: 200A Collector-emitter saturation voltage(Max): 3.5V @ 15V, 40A Total Switching Energy(Ets): 4.5mJ (on), 3mJ (off) Turn-on and Turn-off delay time: 21ns/290ns Testing Conditions: 960V, 40A, 2 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: IXYS Win Source Part Number: 1049621-IXGH40N120B2 D1 Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 100ns IGBT Type: PT Input Type: Standard Gate Charge: 138nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXGH) Maximum Current Collector: 75A VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V Maximum Power Dissipation: 380W Pulsed Collector Current: 200A Collector-emitter saturation voltage(Max): 3.5V @ 15V, 40A Total Switching Energy(Ets): 4.5mJ (on), 3mJ (off) Turn-on and Turn-off delay time: 21ns/290ns Testing Conditions: 960V, 40A, 2 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Sufficient
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Suppliers

Company
Product
Description
Supplier Links
IGBTs - Single - IXGH40N120B2D1 - 1049621-IXGH40N120B2D1 - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - IXGH40N120B2D1
1049621-IXGH40N120B2D1
IGBTs - Single - IXGH40N120B2D1 1049621-IXGH40N120B2D1
Manufacturer: IXYS Win Source Part Number: 1049621-IXGH40N120B2 D1 Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 100ns IGBT Type: PT Input Type: Standard Gate Charge: 138nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXGH) Maximum Current Collector: 75A VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V Maximum Power Dissipation: 380W Pulsed Collector Current: 200A Collector-emitter saturation voltage(Max): 3.5V @ 15V, 40A Total Switching Energy(Ets): 4.5mJ (on), 3mJ (off) Turn-on and Turn-off delay time: 21ns/290ns Testing Conditions: 960V, 40A, 2 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Sufficient

Manufacturer: IXYS
Win Source Part Number: 1049621-IXGH40N120B2D1
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 100ns
IGBT Type: PT
Input Type: Standard
Gate Charge: 138nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AD (IXGH)
Maximum Current Collector: 75A
VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V
Maximum Power Dissipation: 380W
Pulsed Collector Current: 200A
Collector-emitter saturation voltage(Max): 3.5V @ 15V, 40A
Total Switching Energy(Ets): 4.5mJ (on), 3mJ (off)
Turn-on and Turn-off delay time: 21ns/290ns
Testing Conditions: 960V, 40A, 2 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single IGBTs - IXGH40N120B2D1-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
IXGH40N120B2D1-ND
Single IGBTs IXGH40N120B2D1-ND
IGBT PT 1200V 75A 380W Through Hole TO-247AD

IGBT PT 1200V 75A 380W Through Hole TO-247AD

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - IXGH40N120B2D1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
IXGH40N120B2D1
Discrete Semiconductor Products - Transistors - IGBTs IXGH40N120B2D1
IGBT 1200V 75A 380W TO247

IGBT 1200V 75A 380W TO247

Supplier's Site
Sheung Wan, Hong Kong
IGBT Transistors
IXGH40N120B2D1
IGBT Transistors IXGH40N120B2D1
IGBT Transistors IGBT, Diode 1200V, 75A

IGBT Transistors IGBT, Diode 1200V, 75A

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Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 1049621-IXGH40N120B2D1 IXGH40N120B2D1-ND IXGH40N120B2D1 IXGH40N120B2D1
Product Name IGBTs - Single - IXGH40N120B2D1 Single IGBTs Discrete Semiconductor Products - Transistors - IGBTs IGBT Transistors
VCE(on) 3.5 volts
PD 380000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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