Littelfuse, Inc. IGBTs - Single - IXGH30N60C3C1 IXGH30N60C3C1

Description
Manufacturer: IXYS Win Source Part Number: 1049601-IXGH30N60C3C 1 Packaging: Tube/Rail Mounting: Through Hole IGBT Type: PT Input Type: Standard Gate Charge: 38nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXGH) Maximum Current Collector: 60A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 220W Pulsed Collector Current: 150A Collector-emitter saturation voltage(Max): 3V @ 15V, 20A Total Switching Energy(Ets): 120μJ (on), 90μJ (off) Turn-on and Turn-off delay time: 17ns/42ns Testing Conditions: 300V, 20A, 5 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Sufficient
  • IGBTs - Single - IXGH30N60C3C1 - 1049601-IXGH30N60C3C1 - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - IGBTs - IXGH30N60C3C1 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: IXYS Win Source Part Number: 1049601-IXGH30N60C3C 1 Packaging: Tube/Rail Mounting: Through Hole IGBT Type: PT Input Type: Standard Gate Charge: 38nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXGH) Maximum Current Collector: 60A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 220W Pulsed Collector Current: 150A Collector-emitter saturation voltage(Max): 3V @ 15V, 20A Total Switching Energy(Ets): 120μJ (on), 90μJ (off) Turn-on and Turn-off delay time: 17ns/42ns Testing Conditions: 300V, 20A, 5 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
IGBTs - Single - IXGH30N60C3C1 - 1049601-IXGH30N60C3C1 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - IXGH30N60C3C1
1049601-IXGH30N60C3C1
IGBTs - Single - IXGH30N60C3C1 1049601-IXGH30N60C3C1
Manufacturer: IXYS Win Source Part Number: 1049601-IXGH30N60C3C 1 Packaging: Tube/Rail Mounting: Through Hole IGBT Type: PT Input Type: Standard Gate Charge: 38nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXGH) Maximum Current Collector: 60A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Maximum Power Dissipation: 220W Pulsed Collector Current: 150A Collector-emitter saturation voltage(Max): 3V @ 15V, 20A Total Switching Energy(Ets): 120μJ (on), 90μJ (off) Turn-on and Turn-off delay time: 17ns/42ns Testing Conditions: 300V, 20A, 5 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Sufficient

Manufacturer: IXYS
Win Source Part Number: 1049601-IXGH30N60C3C1
Packaging: Tube/Rail
Mounting: Through Hole
IGBT Type: PT
Input Type: Standard
Gate Charge: 38nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AD (IXGH)
Maximum Current Collector: 60A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 220W
Pulsed Collector Current: 150A
Collector-emitter saturation voltage(Max): 3V @ 15V, 20A
Total Switching Energy(Ets): 120μJ (on), 90μJ (off)
Turn-on and Turn-off delay time: 17ns/42ns
Testing Conditions: 300V, 20A, 5 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
IGBT Transistors
IXGH30N60C3C1
IGBT Transistors IXGH30N60C3C1
IGBT Transistors G-SERIES GENX3SIC IGBT 600V 30A

IGBT Transistors G-SERIES GENX3SIC IGBT 600V 30A

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - IXGH30N60C3C1 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
IXGH30N60C3C1
Discrete Semiconductor Products - Transistors - IGBTs IXGH30N60C3C1
IGBT 600V 60A 220W TO247

IGBT 600V 60A 220W TO247

Supplier's Site

Technical Specifications

  Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 1049601-IXGH30N60C3C1 IXGH30N60C3C1 IXGH30N60C3C1
Product Name IGBTs - Single - IXGH30N60C3C1 IGBT Transistors Discrete Semiconductor Products - Transistors - IGBTs
VCE(on) 3 volts
Unlock Full Specs
to access all available technical data