Littelfuse, Inc. Single IGBTs IXGH20N120A3

Description
IGBT PT 1200V 40A 180W Through Hole TO-247AD
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Description
IGBT PT 1200V 40A 180W Through Hole TO-247AD
Request a Quote Datasheet

Suppliers

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Product
Description
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Single IGBTs - IXGH20N120A3-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
IXGH20N120A3-ND
Single IGBTs IXGH20N120A3-ND
IGBT PT 1200V 40A 180W Through Hole TO-247AD

IGBT PT 1200V 40A 180W Through Hole TO-247AD

Buy Now Datasheet
IGBTs - Single - IXGH20N120A3 - 1049569-IXGH20N120A3 - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - IXGH20N120A3
1049569-IXGH20N120A3
IGBTs - Single - IXGH20N120A3 1049569-IXGH20N120A3
Manufacturer: IXYS Win Source Part Number: 1049569-IXGH20N120A3 Packaging: Tube/Rail Mounting: Through Hole IGBT Type: PT Input Type: Standard Gate Charge: 50nC Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXGH) Maximum Current Collector: 40A VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V Maximum Power Dissipation: 180W Pulsed Collector Current: 120A Collector-emitter saturation voltage(Max): 2.5V @ 15V, 20A Total Switching Energy(Ets): 2.85mJ (on), 6.47mJ (off) Turn-on and Turn-off delay time: 16ns/290ns Testing Conditions: 960V, 20A, 10 Ohm, 15V Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Sufficient Application Field: Used in Power Management, Alternative Energy, Industrial

Manufacturer: IXYS
Win Source Part Number: 1049569-IXGH20N120A3
Packaging: Tube/Rail
Mounting: Through Hole
IGBT Type: PT
Input Type: Standard
Gate Charge: 50nC
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AD (IXGH)
Maximum Current Collector: 40A
VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V
Maximum Power Dissipation: 180W
Pulsed Collector Current: 120A
Collector-emitter saturation voltage(Max): 2.5V @ 15V, 20A
Total Switching Energy(Ets): 2.85mJ (on), 6.47mJ (off)
Turn-on and Turn-off delay time: 16ns/290ns
Testing Conditions: 960V, 20A, 10 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Power Management, Alternative Energy, Industrial

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - IXGH20N120A3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
IXGH20N120A3
Discrete Semiconductor Products - Transistors - IGBTs IXGH20N120A3
IGBT 1200V 40A 180W TO247

IGBT 1200V 40A 180W TO247

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number IXGH20N120A3-ND 1049569-IXGH20N120A3 IXGH20N120A3
Product Name Single IGBTs IGBTs - Single - IXGH20N120A3 Discrete Semiconductor Products - Transistors - IGBTs
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-247; TO-247-3 TO-247; SOT3; TO-247AD (IXGH)
Packing Method Tube Rail; Tube; Tube/Rail Tube; Tube
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