Win Source Part Number: 1000342-IXFN62N80Q3
Category: Discrete Semiconductor Products>Transistors
Series: HiPerFET™, Q3 Class
Package: Tube
Standard Package: 10
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 800 V
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 31A, 10V
Vgs(th) (Max) @ Id: 6.5V @ 8mA
Power Dissipation (Max): 960W (Tc)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227B
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 45 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: IXYS
Other Names: -IXFN62N80Q3
Base Product Number: IXFN62
Drive Voltage (Max Rds On, Min Rds On): 10V
N-Channel 800V 49A (Tc) 960W (Tc) Chassis Mount SOT-227B
MOSFET N-CH 800V 49A SOT227B
MOSFET N-CH 800V 49A SOT227B
MOSFET Q3Class HiPerFET Pwr MOSFET 800V/49A
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1000342-IXFN62N80Q3 | IXFN62N80Q3-ND | IXFN62N80Q3 | IXFN62N80Q3 | IXFN62N80Q3 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | ||
| PD | 960000 milliwatts | 960000 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||
| Package Type | SOT3 | SOT-227-4, miniBLOC | SOT-227-4, miniBLOC | SOT-227-4, miniBLOC |
