Manufacturer: IXYS
Win Source Part Number: 1191066-IXFH46N65X2
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.ixys.com
Manufacturer Package: TO-247-3
Power Dissipation (Maximum): 660W
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 30
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 650V
Id - Continuous Drain Current: 46A
Rds On (Maximum) at Id, Vgs: 76mOhm at 23A, 10V
Gate Source Voltage(th) (Maximum) at Id: 5.5V at 4mA
Gate Charge (Qg) (Maximum) at Vgs: 75nC at 10V
Gate Source Voltage (Maximum): ±30V
Input Capacitance (Ciss) (Maximum) at Vds: 4810pF at 25V
MOSFET N-CH 650V 46A TO247
N-Channel 650V 46A (Tc) 660W (Tc) Through Hole TO-247 (IXTH)
MOSFET N-CH 650V 46A TO247
MOSFET MOSFET 650V/46A Ultra Junction X2
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1191066-IXFH46N65X2 | IXFH46N65X2 | 238-IXFH46N65X2-ND | IXFH46N65X2 | IXFH46N65X2 |
| Product Name | FETs - Single - IXFH46N65X2 | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | ||
| V(BR)DSS | 650 volts | 650 volts | |||
| PD | 660000 milliwatts | 660000 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
