Manufacturer: IXYS
Win Source Part Number: 1049424-IXFH36N55Q2
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 560W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AD (IXFH)
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 550V
Continuous Drain Current at 25°C: 36A (Tc)
Gate-Source Threshold Voltage: 5V @ 4mA
Max Gate Charge: 110nC @ 10V
Max Input Capacitance: 4100pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 180 mOhm @ 500mA, 10V
Alternative Parts (Cross-Reference): STW18NM60N; IPW50R280CE; IPW50R280CEFKSA1; IXFH36N55Q2;
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Sufficient
MOSFET N-CH 550V 36A TO247AD
| Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1049424-IXFH36N55Q2 | IXFH36N55Q2 | IXFH36N55Q2 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH36N55Q2 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | ||
| V(BR)DSS | 550 volts | ||
| PD | 560000 milliwatts |
