Zilog TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH36N55Q2 IXFH36N55Q2

Description
Manufacturer: IXYS Win Source Part Number: 1049424-IXFH36N55Q2 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 560W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXFH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 550V Continuous Drain Current at 25°C: 36A (Tc) Gate-Source Threshold Voltage: 5V @ 4mA Max Gate Charge: 110nC @ 10V Max Input Capacitance: 4100pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 180 mOhm @ 500mA, 10V Alternative Parts (Cross-Reference): STW18NM60N; IPW50R280CE; IPW50R280CEFKSA1; IXFH36N55Q2; Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: IXYS Win Source Part Number: 1049424-IXFH36N55Q2 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 560W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXFH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 550V Continuous Drain Current at 25°C: 36A (Tc) Gate-Source Threshold Voltage: 5V @ 4mA Max Gate Charge: 110nC @ 10V Max Input Capacitance: 4100pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 180 mOhm @ 500mA, 10V Alternative Parts (Cross-Reference): STW18NM60N; IPW50R280CE; IPW50R280CEFKSA1; IXFH36N55Q2; Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH36N55Q2 - 1049424-IXFH36N55Q2 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH36N55Q2
1049424-IXFH36N55Q2
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH36N55Q2 1049424-IXFH36N55Q2
Manufacturer: IXYS Win Source Part Number: 1049424-IXFH36N55Q2 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 560W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXFH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 550V Continuous Drain Current at 25°C: 36A (Tc) Gate-Source Threshold Voltage: 5V @ 4mA Max Gate Charge: 110nC @ 10V Max Input Capacitance: 4100pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 180 mOhm @ 500mA, 10V Alternative Parts (Cross-Reference): STW18NM60N; IPW50R280CE; IPW50R280CEFKSA1; IXFH36N55Q2; Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Sufficient

Manufacturer: IXYS
Win Source Part Number: 1049424-IXFH36N55Q2
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 560W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AD (IXFH)
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 550V
Continuous Drain Current at 25°C: 36A (Tc)
Gate-Source Threshold Voltage: 5V @ 4mA
Max Gate Charge: 110nC @ 10V
Max Input Capacitance: 4100pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 180 mOhm @ 500mA, 10V
Alternative Parts (Cross-Reference): STW18NM60N; IPW50R280CE; IPW50R280CEFKSA1; IXFH36N55Q2;
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET 36 Amps 550V 0.16 Rds

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFH36N55Q2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFH36N55Q2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFH36N55Q2
MOSFET N-CH 550V 36A TO247AD

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Technical Specifications

  Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1049424-IXFH36N55Q2 IXFH36N55Q2 IXFH36N55Q2
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH36N55Q2 MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel
V(BR)DSS 550 volts
PD 560000 milliwatts
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