Zilog TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH32N50 IXFH32N50

Description
Manufacturer: IXYS Win Source Part Number: 1049417-IXFH32N50 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 360W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXFH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 32A (Tc) Gate-Source Threshold Voltage: 4V @ 4mA Max Gate Charge: 300nC @ 10V Max Input Capacitance: 5700pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 150 mOhm @ 15A, 10V Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Sufficient Quantity per package: 30
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Description
Manufacturer: IXYS Win Source Part Number: 1049417-IXFH32N50 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 360W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXFH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 32A (Tc) Gate-Source Threshold Voltage: 4V @ 4mA Max Gate Charge: 300nC @ 10V Max Input Capacitance: 5700pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 150 mOhm @ 15A, 10V Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Sufficient Quantity per package: 30
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH32N50 - 1049417-IXFH32N50 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH32N50
1049417-IXFH32N50
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH32N50 1049417-IXFH32N50
Manufacturer: IXYS Win Source Part Number: 1049417-IXFH32N50 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 360W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXFH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 32A (Tc) Gate-Source Threshold Voltage: 4V @ 4mA Max Gate Charge: 300nC @ 10V Max Input Capacitance: 5700pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 150 mOhm @ 15A, 10V Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Sufficient Quantity per package: 30

Manufacturer: IXYS
Win Source Part Number: 1049417-IXFH32N50
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 360W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AD (IXFH)
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 32A (Tc)
Gate-Source Threshold Voltage: 4V @ 4mA
Max Gate Charge: 300nC @ 10V
Max Input Capacitance: 5700pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 150 mOhm @ 15A, 10V
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Sufficient
Quantity per package: 30

Buy Now Datasheet
Transistor - 38654205 - Radwell International
Willingboro, NJ, United States
Transistor
38654205
Transistor 38654205
MOSFET, N, TO-247; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:32A; DRAIN SOURCE VOLTAGE VDS:500V; ON RESISTANCE RDS(ON):150MOHM; RDS(O. FREE 2 YEAR RADWELL WARRANTY

MOSFET, N, TO-247; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:32A; DRAIN SOURCE VOLTAGE VDS:500V; ON RESISTANCE RDS(ON):150MOHM; RDS(O. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFH32N50 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFH32N50
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFH32N50
MOSFET N-CH 500V 32A TO247AD

MOSFET N-CH 500V 32A TO247AD

Supplier's Site

Technical Specifications

  Win Source Electronics Radwell International Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors RF Transistors
Product Number 1049417-IXFH32N50 38654205 IXFH32N50
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH32N50 Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel
V(BR)DSS 500 volts
PD 360000 milliwatts
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Specs
TJ -40 to 175 C (-40 to 347 F)
Package Type TO-247; TO-247-3
Packing Method Tube
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2 suppliers