Manufacturer: IXYS
Win Source Part Number: 1191064-IXFH26N60P
Series: PolarHV
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-247-3
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Family Name: IXFH26N60P
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.ixys.com
Manufacturer Package: TO-247AD (IXFH)
Channel Type Type: N
Drain Source Voltage: 600V
Vgs(th) (Maximum) @ Id: 5V @ 4mA
Gate Charge (Qg) (Maximum) @ Vgs: 72nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 4150pF @ 25V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 460W (Tc)
Rds On (Maximum) @ Id, Vgs: 270 mOhm @ 500mA, 10V
Alternative Parts (Cross-Reference): APT23F60B; IRFP26N60L; SiHFP26N60L;
Introduction Date: December 07, 2006
ECCN: EAR99
Country of Origin: Philippines
Estimated EOL Date: 2024
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Sufficient
N-Channel 600V 26A (Tc) 460W (Tc) Through Hole TO-247AD (IXFH)
MOSFET N-CH 600V 26A TO247AD
MOSFET N-CH 600V 26A TO247AD
| Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|
| Product Category | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1191064-IXFH26N60P | 238-IXFH26N60P-ND | IXFH26N60P | IXFH26N60P | IXFH26N60P |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH26N60P | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs |
| Package Type | TO-247; SOT3 | TO-247; TO-247-3 | TO-247; TO-247-3 | TO-247; TO-247-3 | |
| Polarity | N-Channel | N-Channel; N-Channel | |||
| Packing Method | Tube; Tube | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
