Zilog TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH13N50 IXFH13N50

Description
Manufacturer: IXYS Win Source Part Number: 1049368-IXFH13N50 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 180W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXFH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 13A (Tc) Gate-Source Threshold Voltage: 4V @ 2.5mA Max Gate Charge: 120nC @ 10V Max Input Capacitance: 2800pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 400 mOhm @ 6.5A, 10V Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Balance Application Field: Used in Power Management Quantity per package: 30
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH13N50 - 1049368-IXFH13N50 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IXFH13N50-ND - DigiKey
    DigiKey
  • MOSFET N-CH 500V 13A TO-247AD - 401-IXFH13N50 - Utmel Electronic Limited
    Utmel Electronic Limited
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFH13N50 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Transistor - 32461650 - Radwell International
    Radwell International
Request a Quote Datasheet
Description
Manufacturer: IXYS Win Source Part Number: 1049368-IXFH13N50 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 180W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXFH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 13A (Tc) Gate-Source Threshold Voltage: 4V @ 2.5mA Max Gate Charge: 120nC @ 10V Max Input Capacitance: 2800pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 400 mOhm @ 6.5A, 10V Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Balance Application Field: Used in Power Management Quantity per package: 30
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH13N50 - 1049368-IXFH13N50 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH13N50
1049368-IXFH13N50
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH13N50 1049368-IXFH13N50
Manufacturer: IXYS Win Source Part Number: 1049368-IXFH13N50 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 180W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247AD (IXFH) Dimension: TO-247-3 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 13A (Tc) Gate-Source Threshold Voltage: 4V @ 2.5mA Max Gate Charge: 120nC @ 10V Max Input Capacitance: 2800pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 400 mOhm @ 6.5A, 10V Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Balance Application Field: Used in Power Management Quantity per package: 30

Manufacturer: IXYS
Win Source Part Number: 1049368-IXFH13N50
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 180W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AD (IXFH)
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 13A (Tc)
Gate-Source Threshold Voltage: 4V @ 2.5mA
Max Gate Charge: 120nC @ 10V
Max Input Capacitance: 2800pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 400 mOhm @ 6.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management
Quantity per package: 30

Buy Now Datasheet
Single FETs, MOSFETs - IXFH13N50-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFH13N50-ND
Single FETs, MOSFETs IXFH13N50-ND
N-Channel 500V 13A (Tc) 180W (Tc) Through Hole TO-247AD (IXFH)

N-Channel 500V 13A (Tc) 180W (Tc) Through Hole TO-247AD (IXFH)

Buy Now Datasheet
MOSFET N-CH 500V 13A TO-247AD - 401-IXFH13N50 - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 500V 13A TO-247AD
401-IXFH13N50
MOSFET N-CH 500V 13A TO-247AD 401-IXFH13N50
MOSFET N-CH 500V 13A TO-247AD

MOSFET N-CH 500V 13A TO-247AD

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFH13N50 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFH13N50
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFH13N50
MOSFET N-CH 500V 13A TO247AD

MOSFET N-CH 500V 13A TO247AD

Supplier's Site
Transistor - 32461650 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
32461650
Transistor 32461650
DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 13A I(D), 500V, 0.4OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-247. FREE 2 YEAR RADWELL WARRANTY

DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 13A I(D), 500V, 0.4OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-247. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited Radwell International
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors RF Transistors
Product Number 1049368-IXFH13N50 IXFH13N50-ND 401-IXFH13N50 IXFH13N50 32461650
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFH13N50 Single FETs, MOSFETs MOSFET N-CH 500V 13A TO-247AD Discrete Semiconductor Products - Transistors - FETs, MOSFETs Transistor
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 500 volts 500 volts
PD 180000 milliwatts 180000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-247; SOT3; TO-247AD (IXFH) TO-247; TO-247-3 TO-247; TO-247-3
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