Zilog Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs IXFA18N60X

Description
Win Source Part Number: 1355058-IXFA18N60X Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Temperature Range - Operating: -55°C ~ 150°C (TJ) Fake Threat In the Open Market: 52 pct. MSL Level: 1 (Unlimited) Mfr: IXYS Series: HiPerFET™, Ultra X Package: Tube Product Status: Active Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AA (IXFA) Base Product Number: IXFA18 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 230mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V Power Dissipation (Max): 320W (Tc) Mounting Type: Surface Mount HTSUS: 8541.29.0095 REACH Status: REACH Unaffected ECCN: EAR99
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Description
Win Source Part Number: 1355058-IXFA18N60X Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Temperature Range - Operating: -55°C ~ 150°C (TJ) Fake Threat In the Open Market: 52 pct. MSL Level: 1 (Unlimited) Mfr: IXYS Series: HiPerFET™, Ultra X Package: Tube Product Status: Active Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AA (IXFA) Base Product Number: IXFA18 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 230mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V Power Dissipation (Max): 320W (Tc) Mounting Type: Surface Mount HTSUS: 8541.29.0095 REACH Status: REACH Unaffected ECCN: EAR99
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Suppliers

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Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs - 1355058-IXFA18N60X - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
1355058-IXFA18N60X
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs 1355058-IXFA18N60X
Win Source Part Number: 1355058-IXFA18N60X Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Temperature Range - Operating: -55°C ~ 150°C (TJ) Fake Threat In the Open Market: 52 pct. MSL Level: 1 (Unlimited) Mfr: IXYS Series: HiPerFET™, Ultra X Package: Tube Product Status: Active Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AA (IXFA) Base Product Number: IXFA18 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 230mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V Power Dissipation (Max): 320W (Tc) Mounting Type: Surface Mount HTSUS: 8541.29.0095 REACH Status: REACH Unaffected ECCN: EAR99

Win Source Part Number: 1355058-IXFA18N60X
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Fake Threat In the Open Market: 52 pct.
MSL Level: 1 (Unlimited)
Mfr: IXYS
Series: HiPerFET™, Ultra X
Package: Tube
Product Status: Active
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AA (IXFA)
Base Product Number: IXFA18
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 230mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V
Power Dissipation (Max): 320W (Tc)
Mounting Type: Surface Mount
HTSUS: 8541.29.0095
REACH Status: REACH Unaffected
ECCN: EAR99

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Sheung Wan, Hong Kong
MOSFET DISCMSFT NCH ULTRJNCTN XCLASS

MOSFET DISCMSFT NCH ULTRJNCTN XCLASS

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFA18N60X - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFA18N60X
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFA18N60X
MOSFET N-CH 600V 18A TO263AA

MOSFET N-CH 600V 18A TO263AA

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Technical Specifications

  Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1355058-IXFA18N60X IXFA18N60X IXFA18N60X
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
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