IXYS Corporation Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single IXFA12N65X2-TRL

Description
Win Source Part Number: 1112946-IXFA12N65X2- TRL Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: HiPerFET™, Ultra X2 Package: Tape & Reel (TR) Standard Package: 800 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 310mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 180W (Tc) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 (D2Pak) Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1134 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): IXFA12N65X2TRL; ECCN: EAR99 Fake Threat In the Open Market: 82 pct. REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Other Names: 238-IXFA12N65X2-TRLT R Base Product Number: IXFA12 Drive Voltage (Max Rds On, Min Rds On): 10V
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Description
Win Source Part Number: 1112946-IXFA12N65X2- TRL Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: HiPerFET™, Ultra X2 Package: Tape & Reel (TR) Standard Package: 800 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 310mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 180W (Tc) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 (D2Pak) Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1134 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): IXFA12N65X2TRL; ECCN: EAR99 Fake Threat In the Open Market: 82 pct. REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Other Names: 238-IXFA12N65X2-TRLT R Base Product Number: IXFA12 Drive Voltage (Max Rds On, Min Rds On): 10V
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1112946-IXFA12N65X2-TRL - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1112946-IXFA12N65X2-TRL
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1112946-IXFA12N65X2-TRL
Win Source Part Number: 1112946-IXFA12N65X2- TRL Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: HiPerFET™, Ultra X2 Package: Tape & Reel (TR) Standard Package: 800 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 310mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 180W (Tc) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 (D2Pak) Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1134 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): IXFA12N65X2TRL; ECCN: EAR99 Fake Threat In the Open Market: 82 pct. REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Other Names: 238-IXFA12N65X2-TRLT R Base Product Number: IXFA12 Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1112946-IXFA12N65X2-TRL
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: HiPerFET™, Ultra X2
Package: Tape & Reel (TR)
Standard Package: 800
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 180W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2Pak)
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1134 pF @ 25 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): IXFA12N65X2TRL;
ECCN: EAR99
Fake Threat In the Open Market: 82 pct.
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: IXYS
Other Names: 238-IXFA12N65X2-TRLTR
Base Product Number: IXFA12
Drive Voltage (Max Rds On, Min Rds On): 10V

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Single FETs, MOSFETs - 238-IXFA12N65X2-TRLTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
238-IXFA12N65X2-TRLTR-ND
Single FETs, MOSFETs 238-IXFA12N65X2-TRLTR-ND
N-Channel 650V 12A (Tc) 180W (Tc) Surface Mount TO-263 (D2Pak)

N-Channel 650V 12A (Tc) 180W (Tc) Surface Mount TO-263 (D2Pak)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFA12N65X2-TRL - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFA12N65X2-TRL
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFA12N65X2-TRL
MOSFET N-CH 650V 12A TO263

MOSFET N-CH 650V 12A TO263

Supplier's Site
Single FETs, MOSFETs - IXFA12N65X2-TRL - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IXFA12N65X2-TRL
Single FETs, MOSFETs IXFA12N65X2-TRL
MOSFET N-CH 650V 12A TO263

MOSFET N-CH 650V 12A TO263

Supplier's Site
Sheung Wan, Hong Kong
MOSFET IXFA12N65X2 TRL

MOSFET IXFA12N65X2 TRL

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Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global) VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1112946-IXFA12N65X2-TRL 238-IXFA12N65X2-TRLTR-ND IXFA12N65X2-TRL IXFA12N65X2-TRL IXFA12N65X2-TRL
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Single FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel N-Channel; N-Channel
PD 180000 milliwatts 180000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-263; SOT3 TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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