Littelfuse, Inc. Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs IXDR30N120D1

Description
Win Source Part Number: 1351926-IXDR30N120D1 Category: Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs Package: Tube Standard Package: 30 Power - Max: 200 W Reverse Recovery Time (trr): 40 ns IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 60 A Switching Energy: 4.6mJ (on) , 3.4mJ (off) Input Type: Standard Gate Charge: 120 nC Test Condition: 600V, 30A, 47Ohm, 15V Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: ISOPLUS247™ Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 34 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Base Product Number: IXDR30 California Prop 65: Warning Information Current - Collector (Ic) (Max): 50 A Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 30A
  • Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs - 1351926-IXDR30N120D1 - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - IGBTs - IXDR30N120D1 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Win Source Part Number: 1351926-IXDR30N120D1 Category: Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs Package: Tube Standard Package: 30 Power - Max: 200 W Reverse Recovery Time (trr): 40 ns IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 60 A Switching Energy: 4.6mJ (on) , 3.4mJ (off) Input Type: Standard Gate Charge: 120 nC Test Condition: 600V, 30A, 47Ohm, 15V Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: ISOPLUS247™ Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 34 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Base Product Number: IXDR30 California Prop 65: Warning Information Current - Collector (Ic) (Max): 50 A Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 30A
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Suppliers

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Description
Supplier Links
Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs - 1351926-IXDR30N120D1 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
1351926-IXDR30N120D1
Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs 1351926-IXDR30N120D1
Win Source Part Number: 1351926-IXDR30N120D1 Category: Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs Package: Tube Standard Package: 30 Power - Max: 200 W Reverse Recovery Time (trr): 40 ns IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 60 A Switching Energy: 4.6mJ (on) , 3.4mJ (off) Input Type: Standard Gate Charge: 120 nC Test Condition: 600V, 30A, 47Ohm, 15V Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: ISOPLUS247™ Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 34 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Base Product Number: IXDR30 California Prop 65: Warning Information Current - Collector (Ic) (Max): 50 A Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 30A

Win Source Part Number: 1351926-IXDR30N120D1
Category: Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Package: Tube
Standard Package: 30
Power - Max: 200 W
Reverse Recovery Time (trr): 40 ns
IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Switching Energy: 4.6mJ (on) , 3.4mJ (off)
Input Type: Standard
Gate Charge: 120 nC
Test Condition: 600V, 30A, 47Ohm, 15V
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: ISOPLUS247™
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 34 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: IXYS
Base Product Number: IXDR30
California Prop 65: Warning Information
Current - Collector (Ic) (Max): 50 A
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 30A

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
IGBT Transistors
IXDR30N120D1
IGBT Transistors IXDR30N120D1
IGBT Transistors 30 Amps 1200V

IGBT Transistors 30 Amps 1200V

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - IXDR30N120D1 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
IXDR30N120D1
Discrete Semiconductor Products - Transistors - IGBTs IXDR30N120D1
IGBT 1200V 50A 200W ISOPLUS247

IGBT 1200V 50A 200W ISOPLUS247

Supplier's Site

Technical Specifications

  Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 1351926-IXDR30N120D1 IXDR30N120D1 IXDR30N120D1
Product Name Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs IGBT Transistors Discrete Semiconductor Products - Transistors - IGBTs
VCES 1200 volts
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