IGBT NPT 1200V 38A 200W Through Hole TO-247AD
Manufacturer: IXYS
Win Source Part Number: 1190970-IXDH20N120D1
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-3P-3 Full Pack
Power - Max: 200W
Reverse Recovery Time (trr): 40ns
IGBT Type: NPT
Current - Collector Pulsed (Icm): 50A
Switching Energy: 3.1mJ (on), 2.4mJ (off)
Input Type: Standard
Gate Charge: 70nC
Test Condition: 600V, 20A, 82 Ohm, 15V
Family Name: IXDH20N120D1
Categories: Discrete Semiconductor Products
Manufacturer Homepage: www.ixys.com
Manufacturer Package: TO-247AD
Current - Collector (Ic) (Maximum): 38A
Voltage - Collector Emitter Breakdown (Maximum): 1200V
Vce(on) (Maximum) @ Vge, Ic: 3V @ 15V, 20A
Alternative Parts (Cross-Reference): STGW15S120DF3; STGW15H120F2; STGWA15H120DF2;
Introduction Date: October 21, 2000
ECCN: EAR99
Country of Origin: Republic of Korea
Estimated EOL Date: 2025
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Limited
IGBT 1200V 38A 200W TO247AD
IGBT Transistors 20 Amps 1200V
TRANSISTOR, IGBT, NPT, 1200V, 38A, 200W, THROUGH HOLE TO-247AD, ROHS3 COMPLIANT . FREE 2 YEAR RADWELL WARRANTY
| DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Radwell International | |
|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | RF Transistors |
| Product Number | IXDH20N120D1-ND | 1190970-IXDH20N120D1 | IXDH20N120D1 | IXDH20N120D1 | 63049697 |
| Product Name | Single IGBTs | IGBTs - Single - IXDH20N120D1 | Discrete Semiconductor Products - Transistors - IGBTs | IGBT Transistors | Transistor |
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
