Littelfuse, Inc. Single IGBTs IXA37IF1200HJ

Description
IGBT PT 1200V 58A 195W Through Hole ISOPLUS247™
Request a Quote Datasheet
Description
IGBT PT 1200V 58A 195W Through Hole ISOPLUS247™
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single IGBTs - IXA37IF1200HJ-ND - DigiKey
Thief River Falls, MN, United States
Single IGBTs
IXA37IF1200HJ-ND
Single IGBTs IXA37IF1200HJ-ND
IGBT PT 1200V 58A 195W Through Hole ISOPLUS247™

IGBT PT 1200V 58A 195W Through Hole ISOPLUS247™

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - Single - 1324005-IXA37IF1200HJ - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - IGBTs - Single
1324005-IXA37IF1200HJ
Discrete Semiconductor Products - Transistors - IGBTs - Single 1324005-IXA37IF1200HJ
Manufacturer: IXYS Win Source Part Number: 1324005-IXA37IF1200H J Category: Discrete Semiconductor Products>Transistors - IGBTs - Single Packaging: Tube Standard Package: 30 Mounting: Through Hole Power - Max: 195 W Reverse Recovery Time (trr): 350 ns IGBT Type: PT Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 58 A Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A Switching Energy: 3.8mJ (on), 4.1mJ (off) Input Type: Standard Gate Charge: 106 nC Test Condition: 600V, 35A, 27Ohm, 15V Supplier Device Package: ISOPLUS247™ Temperature Range - Operating: -40°C ~ 150°C (TJ) Case / Package: TO-247-3 ECCN: EAR99 Fake Threat In the Open Market: 80 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Base Product Number: IXA37IF1200 RoHS Status: ROHS3 Compliant

Manufacturer: IXYS
Win Source Part Number: 1324005-IXA37IF1200HJ
Category: Discrete Semiconductor Products>Transistors - IGBTs - Single
Packaging: Tube
Standard Package: 30
Mounting: Through Hole
Power - Max: 195 W
Reverse Recovery Time (trr): 350 ns
IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 58 A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A
Switching Energy: 3.8mJ (on), 4.1mJ (off)
Input Type: Standard
Gate Charge: 106 nC
Test Condition: 600V, 35A, 27Ohm, 15V
Supplier Device Package: ISOPLUS247™
Temperature Range - Operating: -40°C ~ 150°C (TJ)
Case / Package: TO-247-3
ECCN: EAR99
Fake Threat In the Open Market: 80
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Base Product Number: IXA37IF1200
RoHS Status: ROHS3 Compliant

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - IXA37IF1200HJ - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
IXA37IF1200HJ
Discrete Semiconductor Products - Transistors - IGBTs IXA37IF1200HJ
IGBT 1200V 58A 195W TO247

IGBT 1200V 58A 195W TO247

Supplier's Site
Sheung Wan, Hong Kong
IGBT Transistors
IXA37IF1200HJ
IGBT Transistors IXA37IF1200HJ
IGBT Transistors XPT 1200V IGBT GenX3 XPT IGBTs

IGBT Transistors XPT 1200V IGBT GenX3 XPT IGBTs

Buy Now Datasheet

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number IXA37IF1200HJ-ND 1324005-IXA37IF1200HJ IXA37IF1200HJ IXA37IF1200HJ
Product Name Single IGBTs Discrete Semiconductor Products - Transistors - IGBTs - Single Discrete Semiconductor Products - Transistors - IGBTs IGBT Transistors
TJ -40 to 150 C (-40 to 302 F) -40 to 150 C (-40 to 302 F)
Unlock Full Specs
to access all available technical data