Isobaud, Inc. Radiation Tolerant Hermetic Silicon Phototransistor IB14P1

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Radiation Tolerant Hermetic Silicon Phototransistor - IB14P1 - Isobaud, Inc.
Isobaud, Inc.
Santa Clara, CA, USA
Radiation Tolerant Hermetic Silicon Phototransistor IB14P1
The IB14P1 / IB14P2 consist of silicon phototransistors mounted in a narrow angle hermetic TO-18 package. Features Hermetic 3-pin TO-18 package Narrow reception angle High reliability and rugged construction High reliability screening available Radiation tolerant Operating temperature range -65°C to +125°C Applications Encoders Position Sensors Level Detection

The IB14P1 / IB14P2 consist of silicon phototransistors mounted in a narrow angle hermetic TO-18 package.

Features

  • Hermetic 3-pin TO-18 package
  • Narrow reception angle
  • High reliability and rugged construction
  • High reliability screening available
  • Radiation tolerant
  • Operating temperature range -65°C to +125°C

Applications

  • Encoders
  • Position Sensors
  • Level Detection
Supplier's Site Datasheet

Technical Specifications

  Isobaud, Inc.
Product Category Phototransistors
Product Number IB14P1
Product Name Radiation Tolerant Hermetic Silicon Phototransistor
Operating Temperature -65 to 125 C (-85 to 257 F)
Collector-Emitter Breakdown Voltage 30 volts
Material Silicon
Collector Dark Current 100 nA
Fall Time 12000 ns
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