Isobaud, Inc. Radiation Tolerant Hermetic Silicon Phototransistor IB14G3

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Radiation Tolerant Hermetic Silicon Phototransistor - IB14G3 - Isobaud, Inc.
Santa Clara, CA, USA
Radiation Tolerant Hermetic Silicon Phototransistor IB14G3
The IB14G1 / IB14G2 / IB14G3 consist of silicon phototransistors mounted in a narrow angle hermetic TO-18 package. Features Hermetic 3-pin TO-18 package Narrow reception angle High reliability and rugged construction High reliability screening available Radiation tolerant Operating temperature range -65°C to +125°C Applications Encoders Position Sensors Level Detection
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Technical Specifications

  Isobaud, Inc.
Product Category Phototransistors
Product Number IB14G3
Product Name Radiation Tolerant Hermetic Silicon Phototransistor
Operating Temperature -65 to 125 C (-85 to 257 F)
Collector-Emitter Breakdown Voltage 45 volts
Material Silicon
Collector Dark Current 100 nA
Fall Time 7000 ns
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