Inventchip Technology Single FETs, MOSFETs IV3Q12035D7Z

The IV3Q12035D7Z is a third-generation 1200V 35mΩ silicon carbide MOSFET in a TO-263-7 package, designed for automotive motor drives, solar inverters, and high-voltage DC/DC converters. It supports a continuous drain current of 63A at 25°C and 36A at 100°C, with a maximum junction temperature of 175°C. Thermal resistance from junction to case is 0.46°C/W. The device features a Kelvin source connection, a fast intrinsic body diode, and operates with a gate drive voltage of +15V to +18V. It meets AEC-Q101 qualification criteria. Package dimensions comply with JEDEC TO-263, Variation AD.