InterFET Corporation JFET SMPJ204

Description
JFET JFET N-Channel -40V 50mA 360mW 3.27mW
Description
JFET JFET N-Channel -40V 50mA 360mW 3.27mW
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Datasheet Summary
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SMPJ204 is an N-channel silicon junction field-effect transistor designed for audio and general-purpose amplification. It is packaged in a TO-226AA surface-mount case with pin configuration: 1-drain, 2-source, 3-gate. The device has a maximum reverse gate-source and gate-drain voltage of -40 V, a continuous forward gate current of 50 mA, and a continuous power dissipation of 360 mW with a power derating of 3.27 mW/°C. At 25°C, the gate-source cutoff voltage ranges from -0.3 V to -2 V, and the drain saturation current ranges from 0.2 mA to 3 mA. Transconductance is 500 to 1500 µS, input capacitance is 4 pF, and reverse transfer capacitance is 1 pF. The equivalent short-circuit input noise voltage is 5 to 10 nV/√Hz.

Datasheet Summary
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SMPJ204 is an N-channel silicon junction field-effect transistor designed for audio and general-purpose amplification. It is packaged in a TO-226AA surface-mount case with pin configuration: 1-drain, 2-source, 3-gate. The device has a maximum reverse gate-source and gate-drain voltage of -40 V, a continuous forward gate current of 50 mA, and a continuous power dissipation of 360 mW with a power derating of 3.27 mW/°C. At 25°C, the gate-source cutoff voltage ranges from -0.3 V to -2 V, and the drain saturation current ranges from 0.2 mA to 3 mA. Transconductance is 500 to 1500 µS, input capacitance is 4 pF, and reverse transfer capacitance is 1 pF. The equivalent short-circuit input noise voltage is 5 to 10 nV/√Hz.

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Sheung Wan, Hong Kong
JFET JFET N-Channel -40V 50mA 360mW 3.27mW

JFET JFET N-Channel -40V 50mA 360mW 3.27mW

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Transistors
Product Number SMPJ204
Product Name JFET
Transistor Type JFET
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