The IFN5197 is a matched dual N-channel silicon junction field-effect transistor for differential applications in a SOIC-8 package. It has a maximum reverse gate-source and gate-drain voltage of -50 V, a continuous gate current of 50 mA, and a power dissipation of 250 mW. The device operates from -55°C to +125°C and is rated for storage up to +150°C. Key electrical characteristics include a gate-source cutoff voltage range of -0.7 to -4 V, a drain saturation current of 0.7 to 7 mA, and a transconductance of 1 to 4 mS. Differential gate-source voltage matching is specified within 5 mV at 200 µA drain current, with a temperature coefficient of 10 µV/°C. Noise performance includes an equivalent input voltage noise of 20 nV/√Hz and a noise figure of 0.5 dB at 100 Hz.
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Transistors |
| Product Number | IFN5197 |
| Product Name | JFET |
| Transistor Type | JFET |
