InterFET Corporation JFET 2N3971

The 2N3971 is an N-channel silicon junction field-effect transistor designed for low rds(on) and fast switching applications. It is packaged in a standard case with a maximum power dissipation of 300 mW and power derating of 1.7 mW/°C. The device has a gate-source breakdown voltage of -40 V, continuous forward gate current of 50 mA, and gate reverse current of 250 pA. Drain saturation current ranges from 25 to 75 mA at VDS = 10 V and VGS = 0 V. Drain-source on resistance is 60 to 100 Ω at VGS = 0 V and ID = 0 V. Input capacitance is 25 pF and reverse transfer capacitance is 6 pF at specified test conditions. Switching times include turn-on delay of 15 to 40 ns, rise time of 15 to 40 ns, and turn-off time of 60 to 100 ns. Operating temperature range is -65°C to +150°C.