Integrated Silicon Solution, Inc. Memory IS61DDB21M18C-250M3L

Description
SRAM - Synchronous, DDR II Memory IC 18Mbit Parallel 250 MHz 165-LFBGA (15x17)
Datasheet
Description
SRAM - Synchronous, DDR II Memory IC 18Mbit Parallel 250 MHz 165-LFBGA (15x17)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IS61DDB21M18C-250M3L - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, DDR II Memory IC 18Mbit Parallel 250 MHz 165-LFBGA (15x17)

SRAM - Synchronous, DDR II Memory IC 18Mbit Parallel 250 MHz 165-LFBGA (15x17)

Buy Now Datasheet
IC SRAM 18MBIT PARALLEL 165LFBGA

IC SRAM 18MBIT PARALLEL 165LFBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - IS61DDB21M18C-250M3L - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
IS61DDB21M18C-250M3L
Integrated Circuits (ICs) - Memory - Memory IS61DDB21M18C-250M3L
IC SRAM 18MBIT PARALLEL 165LFBGA

IC SRAM 18MBIT PARALLEL 165LFBGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number IS61DDB21M18C-250M3L IS61DDB21M18C-250M3L IS61DDB21M18C-250M3L
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category SRAM; SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip
Operating Temperature 0 to 70 C (32 to 158 F)
Density 18000 kbits 18000 kbits 18000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1712222P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Density 1024000 kbits
Package Type SOIC; SOIC
View Details
Memory - A2C0006273800 A - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
2 suppliers
Memory - 28C17A-15B/XA - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EEPROM; EEPROM
Access Time 150 ns
Density 16 kbits
View Details