Integrated Silicon Solution, Inc. Integrated Circuits (ICs) - Memory - Memory IS25LP040E-JBLE-TR

Description
IC FLASH 4MBIT SPI/QUAD 8SOIC
Description
IC FLASH 4MBIT SPI/QUAD 8SOIC
Datasheet
Datasheet Summary
Powered by GS/AI

The IS25LP040E-JBLE-TR is a 4Mbit (512Kbyte) serial flash memory device from Quarktwin Technology Ltd., designed for low power consumption and high performance. It operates with a single voltage supply ranging from 2.30V to 3.60V and features a low active read current of 6 mA, standby current of 17 ¬µA, and deep power down current of 3 ¬µA. The device supports a wide temperature range, with extended grades from -40¬8C to +105¬8C and automotive grades from -40¬8C to +125¬8C. This memory device utilizes a 4-wire SPI interface and supports standard SPI, Multi-I/O SPI, and Quad Peripheral Interface (QPI) modes, allowing for data transfer rates of up to 104MHz, which can achieve equivalent clock rates of 416MHz. It features a flexible memory architecture with programmable pages of 256 bytes, supporting up to 100,000 erase/program cycles and over 20 years of data retention. The IS25LP040E-JBLE-TR includes advanced security features such as software and hardware write protection, a dedicated security area, and a unique 128-bit ID for each device. It is available in various package types, including 8-pin SOIC and WSON configurations, making it suitable for applications requiring compact design and efficient memory access.

Datasheet Summary
Powered by GS/AI

The IS25LP040E-JBLE-TR is a 4Mbit (512Kbyte) serial flash memory device from Quarktwin Technology Ltd., designed for low power consumption and high performance. It operates with a single voltage supply ranging from 2.30V to 3.60V and features a low active read current of 6 mA, standby current of 17 ¬µA, and deep power down current of 3 ¬µA. The device supports a wide temperature range, with extended grades from -40¬8C to +105¬8C and automotive grades from -40¬8C to +125¬8C. This memory device utilizes a 4-wire SPI interface and supports standard SPI, Multi-I/O SPI, and Quad Peripheral Interface (QPI) modes, allowing for data transfer rates of up to 104MHz, which can achieve equivalent clock rates of 416MHz. It features a flexible memory architecture with programmable pages of 256 bytes, supporting up to 100,000 erase/program cycles and over 20 years of data retention. The IS25LP040E-JBLE-TR includes advanced security features such as software and hardware write protection, a dedicated security area, and a unique 128-bit ID for each device. It is available in various package types, including 8-pin SOIC and WSON configurations, making it suitable for applications requiring compact design and efficient memory access.

Suppliers

Company
Product
Description
Supplier Links
Integrated Circuits (ICs) - Memory - Memory - IS25LP040E-JBLE-TR - Acme Chip Technology Co., Limited
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
IS25LP040E-JBLE-TR
Integrated Circuits (ICs) - Memory - Memory IS25LP040E-JBLE-TR
IC FLASH 4MBIT SPI/QUAD 8SOIC

IC FLASH 4MBIT SPI/QUAD 8SOIC

Supplier's Site
IC FLASH 1MBIT SPI QUAD 65NM 8SO

IC FLASH 1MBIT SPI QUAD 65NM 8SO

Supplier's Site Datasheet
Memory - IS25LP040E-JBLE-TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 4Mbit SPI - Quad I/O, QPI 104 MHz 8 ns 8-SOIC

FLASH - NOR Memory IC 4Mbit SPI - Quad I/O, QPI 104 MHz 8 ns 8-SOIC

Buy Now Datasheet

Technical Specifications

  Acme Chip Technology Co., Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number IS25LP040E-JBLE-TR IS25LP040E-JBLE-TR IS25LP040E-JBLE-TR
Product Name Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category Flash; Non-Volatile Flash; Flash Flash; FLASH
Cycle Time 8 ns
Density 4000 kbits 4000 kbits 4000 kbits
Package Type 104 MHz SOIC; 8-SOIC (0.209\", 5.30mm Width)
Unlock Full Specs
to access all available technical data

Similar Products

Memory - SMJ418160 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DRAM; DRAM Chip
Access Time 70 to 80 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
 - LP3913SQ-AU/NOPB - Rochester Electronics
Texas Instruments
Specs
Memory Category Flash
Package Type HVQFN48
View Details
Memory - LE25FU406BMB-TLM-H - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category Flash; Flash
Density 4000 kbits
View Details
Specs
Operating Temperature 0 to 115 C (32 to 239 F)
Package Type QFP; Tape & Reel (TR)
Supply Voltage 2.8V ~ 3.465V
View Details