The 71V67903 3.3V CMOS SRAM is organized as 512K x 18. The 71V67903 SRAM contains write, data, address and control registers. There are no registers in the data output path (flow-through architecture). The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM .
IC SRAM 9MBIT PAR 165CABGA
SRAM - Synchronous, SDR Memory IC 9Mbit Parallel 100 MHz 8 ns 165-CABGA (13x15)
| Integrated Device Technology | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | |
|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 71V67903S80BQI | 71V67903S80BQI | 71V67903S80BQI |
| Product Name | 3.3V 512K x 18 Synchronous 3.3V I/O Flowthrough SRAM | Integrated Circuits (ICs) - Memory - Memory | Memory |
| Memory Category | SRAM Chip | Volatile; SRAM Chip | SRAM; SRAM Chip |
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | |
| Density | 512 kbits | 9000 kbits | 9000 kbits |
| Number of Words | 512 k | ||
| Address Bus Width | 18 bits |
