Integrated Device Technology 5.0V 8K x 8 Asynchronous Static RAM 7164S25TPG

Description
The 7164 5V CMOS SRAM is organized as 8K x 8. The 7164 offers a reduced power standby mode. The low-power (L) version also offers a battery backup data retention capability at power supply levels as low as 2V. All inputs and outputs of the IDT7164 are TTL -compatible and operation is from a single 5V supply, simplifying system designs. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.
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Description
The 7164 5V CMOS SRAM is organized as 8K x 8. The 7164 offers a reduced power standby mode. The low-power (L) version also offers a battery backup data retention capability at power supply levels as low as 2V. All inputs and outputs of the IDT7164 are TTL -compatible and operation is from a single 5V supply, simplifying system designs. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.
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Suppliers

Company
Product
Description
Supplier Links
5.0V 8K x 8 Asynchronous Static RAM - 7164S25TPG - Integrated Device Technology
San Jose, CA, USA
5.0V 8K x 8 Asynchronous Static RAM
7164S25TPG
5.0V 8K x 8 Asynchronous Static RAM 7164S25TPG
The 7164 5V CMOS SRAM is organized as 8K x 8. The 7164 offers a reduced power standby mode. The low-power (L) version also offers a battery backup data retention capability at power supply levels as low as 2V. All inputs and outputs of the IDT7164 are TTL -compatible and operation is from a single 5V supply, simplifying system designs. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.

The 7164 5V CMOS SRAM is organized as 8K x 8. The 7164 offers a reduced power standby mode. The low-power (L) version also offers a battery backup data retention capability at power supply levels as low as 2V. All inputs and outputs of the IDT7164 are TTL -compatible and operation is from a single 5V supply, simplifying system designs. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.

Supplier's Site Datasheet
Memory - SRAM - 7164S25TPG - 776573-7164S25TPG - Win Source Electronics
Laguna Hills, CA, United States
Memory - SRAM - 7164S25TPG
776573-7164S25TPG
Memory - SRAM - 7164S25TPG 776573-7164S25TPG
Manufacturer: IDT, Integrated Device Technology Inc Win Source Part Number: 776573-7164S25TPG Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: 0°C ~ 70°C (TA) Package: 28-DIP (0.300", 7.62mm) Technology: SRAM - Asynchronous Operating Supply Voltage: 4.5 V ~ 5.5 V Memory Type: Volatile Memory Size: 64Kb (8K x 8) Access Time: 25ns Family Name: 7164S Categories: Integrated Circuits (ICs) Memory Format: SRAM Write Cycle Time - Word, Page: 25ns Memory Interface: Parallel Manufacturer Package: 28-PDIP Alternative Parts (Cross-Reference): AS7C164-20PC; CY7C186-25PC; LY6264DL-55LLE; LY6264DL-70LLET ; Introduction Date: May 02, 2011 ECCN: EAR99 Country of Origin: Philippines, Thailand Estimated EOL Date: 2029 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Limited

Manufacturer: IDT, Integrated Device Technology Inc
Win Source Part Number: 776573-7164S25TPG
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: 0°C ~ 70°C (TA)
Package: 28-DIP (0.300", 7.62mm)
Technology: SRAM - Asynchronous
Operating Supply Voltage: 4.5 V ~ 5.5 V
Memory Type: Volatile
Memory Size: 64Kb (8K x 8)
Access Time: 25ns
Family Name: 7164S
Categories: Integrated Circuits (ICs)
Memory Format: SRAM
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Manufacturer Package: 28-PDIP
Alternative Parts (Cross-Reference): AS7C164-20PC; CY7C186-25PC; LY6264DL-55LLE; LY6264DL-70LLET ;
Introduction Date: May 02, 2011
ECCN: EAR99
Country of Origin: Philippines, Thailand
Estimated EOL Date: 2029
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Memory - 7164S25TPG - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 64Kbit Parallel 25 ns 28-PDIP

SRAM - Asynchronous Memory IC 64Kbit Parallel 25 ns 28-PDIP

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - 7164S25TPG - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
7164S25TPG
Integrated Circuits (ICs) - Memory - Memory 7164S25TPG
IC SRAM 64KBIT PARALLEL 28DIP

IC SRAM 64KBIT PARALLEL 28DIP

Supplier's Site

Technical Specifications

  Integrated Device Technology Win Source Electronics Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 7164S25TPG 776573-7164S25TPG 7164S25TPG 7164S25TPG
Product Name 5.0V 8K x 8 Asynchronous Static RAM Memory - SRAM - 7164S25TPG Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip
Access Time 25 ns 25 ns 25 ns
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 64 kbits 64 kbits 64 kbits
Number of Words 8 k
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