Integrated Device Technology 5.0V 8K x 8 Asynchronous Static RAM 7164L85TDB

Description
The 7164 5V CMOS SRAM is organized as 8K x 8. The 7164 offers a reduced power standby mode. The low-power (L) version also offers a battery backup data retention capability at power supply levels as low as 2V. All inputs and outputs of the IDT7164 are TTL -compatible and operation is from a single 5V supply, simplifying system designs. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.
Datasheet
Description
The 7164 5V CMOS SRAM is organized as 8K x 8. The 7164 offers a reduced power standby mode. The low-power (L) version also offers a battery backup data retention capability at power supply levels as low as 2V. All inputs and outputs of the IDT7164 are TTL -compatible and operation is from a single 5V supply, simplifying system designs. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.
Datasheet

Suppliers

Company
Product
Description
Supplier Links
5.0V 8K x 8 Asynchronous Static RAM - 7164L85TDB - Integrated Device Technology
San Jose, CA, USA
5.0V 8K x 8 Asynchronous Static RAM
7164L85TDB
5.0V 8K x 8 Asynchronous Static RAM 7164L85TDB
The 7164 5V CMOS SRAM is organized as 8K x 8. The 7164 offers a reduced power standby mode. The low-power (L) version also offers a battery backup data retention capability at power supply levels as low as 2V. All inputs and outputs of the IDT7164 are TTL -compatible and operation is from a single 5V supply, simplifying system designs. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.

The 7164 5V CMOS SRAM is organized as 8K x 8. The 7164 offers a reduced power standby mode. The low-power (L) version also offers a battery backup data retention capability at power supply levels as low as 2V. All inputs and outputs of the IDT7164 are TTL -compatible and operation is from a single 5V supply, simplifying system designs. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.

Supplier's Site Datasheet
Memory - 7164L85TDB - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 64Kbit Parallel 85 ns 28-CDIP

SRAM - Asynchronous Memory IC 64Kbit Parallel 85 ns 28-CDIP

Buy Now Datasheet

Technical Specifications

  Integrated Device Technology Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number 7164L85TDB 7164L85TDB
Product Name 5.0V 8K x 8 Asynchronous Static RAM Memory
Memory Category SRAM Chip SRAM; SRAM Chip
Access Time 85 ns 85 ns
Operating Temperature -55 to 125 C (-67 to 257 F) -55 to 125 C (-67 to 257 F)
Density 64 kbits 64 kbits
Number of Words 8 k
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 71016S15PHG - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 15 ns
Density 1000 kbits
View Details
Memory - AS8SLC512K32PECA - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SRAM; SRAM Chip
Access Time 12 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Flash Memory - 1882657P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Package Type VFBGA
Pins 63
View Details