Rochester Electronics Memory 27S47SADM/B

Description
Memory IC
  • Memory - 27S47SADM/B - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
  • Memory - 27S47SADM/B - Lingto Electronic Limited
    Lingto Electronic Limited
Datasheet
Description
Memory IC
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 27S47SADM/B - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
27S47SADM/B
Memory 27S47SADM/B
Memory IC

Memory IC

Buy Now
Memory - 27S47SADM/B - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
27S47SADM/B
Memory 27S47SADM/B
27S47SADM/B

27S47SADM/B

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips
Product Number 27S47SADM/B 27S47SADM/B
Product Name Memory Memory
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 71124S15YG - Lingto Electronic Limited
Rochester Electronics
Memory
71124S15YG
Specs
Memory Category SRAM; SRAM Chip
Access Time 15 ns
Density 1000 kbits
View Details
Integrated Circuits (ICs) - Memory - Memory - JBP28L42MJ - Shenzhen Shengyu Electronics Technology Limited
Texas Instruments
Integrated Circuits (ICs) - Memory - Memory
JBP28L42MJ
Specs
Memory Category PROM
Density 512 kbits
Supply Voltage 20-CDIP (0.300, 7.62mm)
View Details
2 suppliers
Memory - 40060397 - Quarktwin Technology Ltd.
Infineon Technologies AG
Memory
40060397
View Details
2 suppliers
Memory - MYX4DDR364M16JTBG - Micross Components, Inc.
Micross Components, Inc.
Memory
MYX4DDR364M16JTBG
Specs
Memory Category DDR3
Access Time 1.07 ns
Operating Temperature -40 to 105 C (-40 to 221 F)
View Details