Infineon Technologies AG Mosfet, N Channel, 650V, 20.7A, To-247-3; Channel Type Infineon SPW20N60CFDFKSA1.

Description
MOSFET, N CHANNEL, 650V, 20.7A, TO-247-3; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:20.7A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
  • Mosfet, N Channel, 650V, 20.7A, To-247-3; Channel Type Infineon - 28AC3066 - Newark, An Avnet Company
    Newark, An Avnet Company
Datasheet
Description
MOSFET, N CHANNEL, 650V, 20.7A, TO-247-3; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:20.7A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
Datasheet

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Mosfet, N Channel, 650V, 20.7A, To-247-3; Channel Type Infineon - 28AC3066 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 650V, 20.7A, To-247-3; Channel Type Infineon
28AC3066
Mosfet, N Channel, 650V, 20.7A, To-247-3; Channel Type Infineon 28AC3066
MOSFET, N CHANNEL, 650V, 20.7A, TO-247-3; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:20.7A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

MOSFET, N CHANNEL, 650V, 20.7A, TO-247-3; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:20.7A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 28AC3066
Product Name Mosfet, N Channel, 650V, 20.7A, To-247-3; Channel Type Infineon
Polarity N-Channel
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